Role of oxygen in multiferroic behavior of BiFeO3 films grown on 0.2% Nb doped SrTiO3

Role of strain and nanoscale defects in modifying the multiferroicity in nanostructured BiFeO3films

“…It is reported that oxygen vacancies play an important role in leakage current or lossy ferroelectric loop in BFO films. [11] Oxygen vacancies release one or two electrons under applied electric field, leading to the leakage current. [32] Value of maximum polarisation decreases from »5.78 mC/cm 2 (pristine) to 2.68 mC/cm 2 (511) and 1.93 mC/cm 2 (512) due to irradiation which can be understood as follows: upon SHI irradiation, oxygen vacancies and chemical non-stoichiometry are introduced which in turn generate the conducting paths for charge carriers leading to leakage current across the film/substrate interface.…”

“…Substrate temperature (»670 C) and oxygen partial pressure (»100 mTorr) were maintained during deposition for achieving better multiferroic properties in BFO. [11] All the BFO/SNTO films (3 £ 10 mm 2 in size) were irradiated with 200 MeV Ag C15 ions having fluence » 5 £ 10 11 and 5 £ 10 12 ions/cm 2 , using 15 UD Tandem accelerator facility at Inter University Accelerator Centre (IUAC), New Delhi. Magnetic scanner was used to focus ion beam onto a spot of »1 mm diameter and was continuously scanned over a complete area of the film for uniform irradiation.…”

“…In order to overcome these limitations and to engineer the practical applications of BFO, it is necessary to fabricate BFO thin film-based devices. BFO multiferoics has been studied in thin film, [11] device [12] and composite [13] forms. Most of the BFO-based thin film devices have been fabricated using pulsed laser deposition (PLD), [14] low-cost chemical solution deposition, [15] RFsputtering, [16] spray pyrolysis, [17] etc.…”

“…Most of the BFO-based thin film devices have been fabricated using pulsed laser deposition (PLD), [14] low-cost chemical solution deposition, [15] RFsputtering, [16] spray pyrolysis, [17] etc. In addition, electrical and magnetic properties of BFO thin films have been modified by using various synthesis methods, [14À17,18] substrate temperatures, [19] oxygen partial pressures, [11] film thicknesses, [20] etc. resulting in the modification in the BFO filmÀsubstrate interface.…”

Microwave Characterization of Pb0.45Ca0.55(Fe0.5Nb0.5)1−x Sn x O3 Multiferroics at X-Band

“…These magnetoelectric (ME) compounds have faster switching speed, less response time and low power consumption in comparison to the conventional semiconducting/magnetic devices. 2,3 Due to this, these materials have potential for technological applications like multiple state memories, new data storage media, spintronics, biferroic memory elements, electric field controlled ferromagnetic resonance devices, transducer with magnetically modulated piezoelectricity and so on. [4][5][6][7] Various researchers have reported work on multiferroics which is based on structural, dielectric, magnetic and leakage current properties.…”