2014
DOI: 10.1080/17458080.2014.953608
|View full text |Cite
|
Sign up to set email alerts
|

Role of strain and nanoscale defects in modifying the multiferroicity in nanostructured BiFeO3films

Abstract: BiFeO 3 (BFO) multifunctional oxide exhibits fascinating multiferroic properties suitable for potential application in nanoscale electronic devices such as nonvolatile random accesses memory (FeRAM), field effect transistors, capacitors, logic circuits, etc. In this communication, we report the results of studies on 200 MeV Ag C15 ion irradiation-induced modifications in the structural, microstructural, electrical (IÀV, CÀV and PÀE) and magnetic properties of pulsed laser deposited nanostructured BFO films gro… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 12 publications
(2 citation statements)
references
References 31 publications
(31 reference statements)
0
2
0
Order By: Relevance
“…Similarly, one can expect the modification of WF by introducing lattice strain in MoS 2 nanosheets. Strain induced structural modification in bulk and nanomaterials using swift heavy ion (SHI) has been reported in literature 16 . SHI irradiation is one of the established methods to modify the optical, electrical and structural properties of nanostructured materials and nanocomposites thin films via defect creation 17 20 .…”
Section: Introductionmentioning
confidence: 99%
“…Similarly, one can expect the modification of WF by introducing lattice strain in MoS 2 nanosheets. Strain induced structural modification in bulk and nanomaterials using swift heavy ion (SHI) has been reported in literature 16 . SHI irradiation is one of the established methods to modify the optical, electrical and structural properties of nanostructured materials and nanocomposites thin films via defect creation 17 20 .…”
Section: Introductionmentioning
confidence: 99%
“…These measurements have an error of less than 2%. The SN00 thin film has a higher carrier concentration of 7.66 × 10 19 (cm −3 ) and a higher conductivity of 82.41 (cm) −1 than the composite film because SN00 has a smaller crystallite size and thus more oxygen vacancies at their boundaries act as donors, resulting in a higher free charge carrier density of SN00 nanoparticles that promotes conduction than the SN25 lattice [39,40]. These findings are useful in determining their applications in transparent conducting electrodes and gas sensors [41].…”
Section: Hall Effect Measurementsmentioning
confidence: 99%