Role of nonradiative recombination in the degradation of InGaAsP/InP-based bulk lasers

Kallstenius, Thomas; Landstedt, A.; Smith, Ulf; Granestrand, P.

doi:10.1109/3.890284

Cited by 15 publications

(10 citation statements)

References 19 publications

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“…Concerning the increase of the the saturation current, it has been shown that an increase of the current for a given voltage can be explained by a decrease in carrier lifetime, which can be due to the introduction of non radiative recombination centres [16,19].…”

Section: Discussionmentioning

confidence: 98%

“…This increase is coherent with the diode laser electrical properties theory. From literature [19,20], we expect irradiation induced non radiative recombination centers to result in an increase in the non-radiative current contribution and therefore in a drift of the ideality factor towards 2. It is interesting to note that no annealing effect is observed on this parameter.…”

Section: B Optical Propertiesmentioning

confidence: 97%

See 1 more Smart Citation

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm

Boutillier

Gauthier-Lafaye

Bonnefont

et al. 2007

2007 9th European Conference on Radiation and Its Effects on Components and Systems

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Section: Discussionmentioning

confidence: 98%

Section: B Optical Propertiesmentioning

confidence: 97%

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm

Boutillier

Gauthier-Lafaye

Bonnefont

et al. 2007

2007 9th European Conference on Radiation and Its Effects on Components and Systems

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“…The sudden failure-mode could result from catastrophic, optical mirror-damage (COMD) [19] or a material-defect related failure, e.g. dark-line defect growth, inside the bulk of the material [20]. COMD is generally considered to be the major failure mode limiting the lifetime of AlGaAs/GaAs-based high power lasers [14].…”

Section: Device Reliabilitymentioning

confidence: 99%

“…The wear-out failure-mode occurs for lasers made in all material systems, e.g. AlGaAs/GaAs, InGaAsP/InP and AlGaInAs/InP, mainly due to enhanced, non-radiative recombination during aging [17,18]. The sudden failure-mode could result from catastrophic, optical mirror-damage (COMD) [19] or a material-defect related failure, e.g.…”

Section: Device Reliabilitymentioning

confidence: 99%

High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

Gao

Nelson

et al. 2003

SPIE Proceedings

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We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, laser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemicalvapor deposition. Carbon, rather than zinc, was used as the p-doping source to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm 2 , internal loss of 2.0 cm -1 and internal quantum efficiency of 93% were achieved. For 1500 µm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au 80 Sn 20 solder. Ten burned-in devices have now been aged at a constant current of 450 mA (~ 300 mW) at 85 ºC for more than 1500 hours without measurable degradation.

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“…The wear-out degradation occurs for all the material systems such as AlGaAs/GaAs, InGaAsP/InP and AlGaInAs/InP, mainly due to enhanced nonradiative recombination taking place during the aging [15,19,20]. The sudden failure could result from catastrophic optical mirror damage (COMD) [21] or a defect-related failure (such as dark line damage) inside the bulk of the material [22]. The COMD is well-known as the most important effect limiting the lifetime of AlGaAs/GaAs-based high power lasers [21].…”

Section: Device Reliabilitymentioning

confidence: 99%

High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications

Qian

Hohl-AbiChedid

et al. 2002

Materials and Devices for Optical and Wireless Communications

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This paper reviews recent progress of high-power 14xx-nm pump lasers using AlGaInAs/InP material. This material has superior temperature characteristics to conventional InGaAsP/InP. As a result, it is more suitable for high current and high efficiency operations as well as uncooled applications for the high power 14xx-nm lasers, which are required for advanced optical amplifications. The laser module consists of a laser chip coupled to a fiber lens and mounted on a thermoelectric cooler in a standard butterfly package. The wavelength of the laser can be stabilized with an external fiber Bragg grating (FBG). We have demonstrated a maximum module fiber output power of 550mW at 1.75A and characteristic temperatures of T 0 = 99K and T 1 = 348K over a range of chip heat-sink temperatures from 15 0 C to 50 0 C. To the best of our knowledge, these are the highest efficiency and temperature characteristics from a single-mode 14xx-nm semiconductor laser module capable of over 0.5W fiber output power. At a chip heat-sink temperature of 70°C, a power of 360mW was obtained for a laser module with FBG, which is the highest reported to date for any wavelengths from 1300nm to 1600nm and would enable uncooled applications of the 14xx-nm lasers in the future.

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Role of nonradiative recombination in the degradation of InGaAsP/InP-based bulk lasers

Cited by 15 publications

References 19 publications

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm

High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications

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Role of nonradiative recombination in the degradation of InGaAsP/InP-based bulk lasers

Cited by 15 publications

References 19 publications

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 &#x00B5;m

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 &#x00B5;m

High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications

Contact Info

Product

Resources

About

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm