2017
DOI: 10.1021/acs.jpcc.7b05375
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Role of Lead Vacancies for Optoelectronic Properties of Lead-Halide Perovskites

Abstract: Methylammonium lead iodide perovskite materials have been shown to be efficient in photovoltaic devices. The current fabrication process has not been perfected, leaving defects such as site vacancies, which can trap charge and have a detrimental effect on photogenerated charge carriers. Here focus is placed on the effect a Pb site vacancy has on the charge-carrier dynamics following photoexcitation. The electronic structure of materials with vacancies is often found in open-shell configurations with unpaired e… Show more

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Cited by 21 publications
(17 citation statements)
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References 79 publications
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“…The band gap is almost unaffected by the defect, because the shallow trap state generated by the atomic vacancy merges into the VB. Kilin and co-workers studied the effect of the Pb vacancy on the charge carrier dynamics in MAPbI 3 using a Redfield theory formalism . They also found that the Pb vacancy increases the nonradiative relaxation time of the excited electron, in agreement with the NA-MD simulations …”
mentioning
confidence: 54%
“…The band gap is almost unaffected by the defect, because the shallow trap state generated by the atomic vacancy merges into the VB. Kilin and co-workers studied the effect of the Pb vacancy on the charge carrier dynamics in MAPbI 3 using a Redfield theory formalism . They also found that the Pb vacancy increases the nonradiative relaxation time of the excited electron, in agreement with the NA-MD simulations …”
mentioning
confidence: 54%
“…We highlighted that charge recombination is sensitive to the oxidation state of these defects. 163,164,165 Chu et al 88 have investigated the influence of various point defects on nonradiative electron-hole recombination in MAPbI 3 . They focus on five point defects with low formation energy: iodine interstitial (I i ), MA substituted by iodine (MA I ) or Pb (MA Pb ), Pb vacancy (Pb V ), and iodine vacancy (I V ).…”
Section: Unusual Defects Propertiesmentioning
confidence: 99%
“…The absence of gap states from intrinsic defects of MAPbI 3 can be ascribed to the ionic bonding from organicinorganic hybridization. Besides, Vogel et al claimed that the role of lead vacancies in OHP causes the spin specific trap state at near valence band ( Figure 6; Vogel et al, 2017).…”
Section: Intrinsic (Or Native) Defects: Vacancy Schottky/frenkel Defmentioning
confidence: 99%