Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si:H films

Martins, Rodrigo; Águas, Hugo; Ferreira, I.; Silva, V.; Cabrita, A.; Fortunato, Elvira

doi:10.1016/s0040-6090(00)01597-2

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…8 Processing of plasma produced and trapped or externally injected fine particles in plasmas can be useful in fabricating objects such as coated or layered grains with specific surface structure, color, and/or fluorescent properties, 1,9 or nanostructured surfaces with the required properties. 6,[10][11][12] The integrated process of nanoparticle creation and ordered deposition of the processed objects is one of the most promising methods for the synthesis of new composite materials. 6 Plasma grown nanopowder can be used to modify the structure-property relationships, domain structure, and growth dynamics in the integration of various epitaxial oxide and other films on silicon-based nanostructures.…”

Section: -4mentioning

confidence: 99%

Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

Denysenko

Ostrikov

et al. 2003

Journal of Applied Physics

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Femtosecond laser guiding of a high-voltage discharge and the restoration of dielectric strength in air and nitrogen Phys. Plasmas 19, 123502 (2012) Compact high-speed reciprocating probe system for measurements in a Hall thruster discharge and plume Rev. Sci. Instrum. 83, 123503 (2012) On the streamer propagation in methane plasma discharges J. Appl. Phys. 112, 113301 (2012) One-dimensional hybrid-direct kinetic simulation of the discharge plasma in a Hall thruster Phys. Plasmas 19, 113508 (2012) Consideration of the electron energy distribution function shape in a Ar and N2 global model J. Appl. Phys. 112, 103303 (2012) Additional information on J. Appl. Phys. Management of nanosize powder particles via control of plasma parameters in a low-pressure SiH 4 discharge for silicon microfabrication technologies is considered. The spatial profiles of electron and positive/negative ion number densities, electron temperature, and charge of the fine particles are obtained using a self-consistent fluid model of the electronegative plasmas in the parallel plate reactor geometry. The model accounts for variable powder size and number density, powder-charge distribution, local plasma nonuniformity, as well as UV photodetachment of electrons from the nanoparticles. The relations between the equilibrium discharge state and powder properties and the input power and neutral gas pressure are studied. Methods for controlling the electron temperature and SiH 3 Ϫ anion ͑here assumed to be the powder precursor͒ density, and hence the powder growth process, are proposed. It is shown that by controlling the neutral gas pressure, input power, and powder size and density, plasma density profiles with high levels of uniformity can be achieved. Management of powder charge distribution is also possible through control of the external parameters.

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Section: -4mentioning

confidence: 99%

Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

Denysenko

Ostrikov

et al. 2003

Journal of Applied Physics

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“…4 shows that the relationship between N d and E g can be ascribed as a linear dependence. The N d increase can be referred to the carbon incorporation, and also to defects induced by increasing ion bombardment of the film surface [12,13]. The former is likely a dominant mechanism because, as observed for films grown in the low-power regime, the N d increase is proportional to N C .…”

Section: Resultsmentioning

confidence: 97%

Optoelectronic properties of a‐Si_1–xC_x:H films grown in hydrogen diluted silane‐methane plasma

Vygranenko

Fernandes

Louro

et al. 2010

Phys. Status Solidi (c)

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This work reports on the optoelectronic properties and device application of hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films grown by plasma-enhanced chemical vapour deposition (PECVD). The films with an optical bandgap ranging from about 1.8 to 2.0 eV were deposited in hydrogen diluted silane-methane plasma by varying the radio frequency power. Several n-i-p structures with an intrinsic a-Si(1-x)C(x):H layer of different optical gaps were also fabricated. The optimized devices exhibited a diode ideality factor of 1.4-1.8, and a leakage current of 190-470 pA/cm(2) at -5 V. The density of deep defect states in a-Si(1-x)C(x):H was estimated from the transient dark current measurements and correlated with the optical bandgap and carbon content. Urbach energies for the valence band tail were also determined by analyzing the spectral response within sub-bandgap energy range. (C)

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Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films

Shu

Tian

et al. 2006

Optoelectr. Lett.

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In this paper, the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated. It was found that the bombardment increases the light absorption by two to eleven times and increases the conductance of the film by 3 000 times. This has never been reported before of amorphous Si with electron beam evaporation deposition. CLC n u m b e r : O 4 8 4 . 1 ; 0 4 8 4 . 4 + 1 D o c u m e n t c o d e : A

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Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si:H films

Cited by 9 publications

References 7 publications

Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

Optoelectronic properties of a‐Si_1–xC_x:H films grown in hydrogen diluted silane‐methane plasma

Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films

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Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si:H films

Cited by 9 publications

References 7 publications

Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

Optoelectronic properties of a‐Si1–xCx:H films grown in hydrogen diluted silane‐methane plasma

Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films

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Optoelectronic properties of a‐Si_1–xC_x:H films grown in hydrogen diluted silane‐methane plasma