Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN

Gu, Shulin; Zhang, Rong; Sun, Jingxi; Zhang, Ling; Kuech, T. F.

doi:10.1063/1.126675

Cited by 39 publications

(19 citation statements)

References 22 publications

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“…Interfacial Zn might be plausible since sample A employed a ZnO buffer on the Al 2 O 3 . Such treatment can result in a Zn-spinel structure 19 and residual Zn impurities near the interface even though the ZnO was thermally desorbed prior to growth. However, other n-type samples not treated with Zn displayed 2.9 eV emission at the interface.…”

Section: Low Sheet Carrier Concentrationmentioning

confidence: 99%

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Sun

Goss

Brillson

et al. 2002

Journal of Applied Physics

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Cathodoluminescence ͑CL͒ imaging and temperature-dependent cathodoluminescence spectroscopy ͑CLS͒ have been used to probe the spatial distribution and energies of electronic defects near GaN/Al 2 O 3 interfaces grown by hydride vapor phase epitaxy ͑HVPE͒. Cross sectional secondary electron microscopy imaging, CLS, and CL imaging show systematic variations in defect emissions with a wide range of HVPE GaN/sapphire electronic properties. These data, along with electrochemical capacitance-voltage profiling and secondary ion mass spectrometry provide a consistent picture of near-interface doping by O out-diffusion from Al 2 O 3 into GaN over hundreds of nanometers. Low-temperature CL spectra exhibit a new donor level at 3.447 meV near the interface for such samples, characteristic of O impurities spatially localized to the nanoscale interface. CLS emissions indicate the formation of amorphous Al-N-O complexes at 3.8 eV extending into the Al 2 O 3 near the GaN/sapphire interface. CLS and CL images also reveal emissions due to excitons bound to stacking faults and cubic phase GaN. The temperature dependence of the various optical transitions in the 10-300 K range provides additional information to identify the near interface defects and impurity doping.

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Section: Low Sheet Carrier Concentrationmentioning

confidence: 99%

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Sun

Goss

Brillson

et al. 2002

Journal of Applied Physics

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“…In an interesting approach, polycrystalline GaN films with improved structural quality have been deposited over ZnO buffer layers on silicon substrates, using MBE [43], MOCVD [44,45] and pulsed laser deposition (PLD) [46,47] techniques. High quality epilayers of GaN have also been deposited on ZnO buffer layer over sapphire substrates, using this approach [44,48,49].…”

Section: Introductionmentioning

confidence: 99%

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

et al. 2008

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“…Although there has been some success using molecular beam epitaxy ͑MBE͒ 2-4 and pulsed laser deposition ͑PLD͒ 5,6 results have been less encouraging using the dominant indus- trial GaN growth tools: hydride vapor phase epitaxy [7][8][9] and metal organic vapor phase epitaxy ͑MOVPE͒. [10][11][12][13][14] The studies identify three main obstacles.…”

mentioning

confidence: 99%

Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Rogers¹,

Téherani²,

Ougazzaden

et al. 2007

Applied Physics Letters

104

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Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy ͑MOVPE͒. In this work, GaN was grown on ZnO / c-Al 2 O 3 using low temperature/pressure MOVPE with N 2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c-Al 2 O 3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.

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Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN

Cited by 39 publications

References 22 publications

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

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