Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

Kim, Hyo Jin; Park, Se Yeob; Jung, Hong Yoon; Son, Byeong Geun; Lee, Chang Kyu; Lee, Chul-Kyu; Jeong, Jae Hoon; Mo, Yeon‐Gon; Son, Kyoung Seok; Ryu, Myung Kwan; Lee, Sangyoon; Jeong, Jae Kyeong

doi:10.1088/0022-3727/46/5/055104

Cited by 72 publications

(44 citation statements)

References 29 publications

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“…Recently, it is reported that impurity hydrogen affects negative-bias illumination stability by dissociation to H + and formation of shallow donors/additional tail states [18]. Although the charge state of the dissociated H + is different from the present positive-bias stability result, it would be important to compare these results and to seek a comprehensive view of the roles of hydrogens.…”

Section: Resultsmentioning

confidence: 89%

Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga–Zn-O Thin-Film Transistor

Domen

Miyase

Abe

et al. 2014

IEEE Electron Device Lett.

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Origin of constant positive gate bias stress instability in amorphous In-Ga-Zn-O thin-film transistor is studied. Threshold voltage shift ( V th ) during the stress test exhibits two different behaviors: 1) a power function-type and 2) a logarithmic function-type depending on thermal treatment atmosphere and temperature. Thermal desorption spectroscopy indicated that the V th behavior changes from the log-function type to the power-function type as the amount of H 2 desorption increases. Furthermore, the recovery behavior of V th was not affected by gate bias. These results are explained by a diffusionlimited process of neutral hydrogen, which occurs within 2 nm in the vicinity of the channel-insulator interface.Index Terms-Amorphous In-Ga-Zn-O, thin-film transistor, threshold voltage instability, dry annealing, wet annealing, hydrogen desorption.

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Section: Resultsmentioning

confidence: 89%

Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga–Zn-O Thin-Film Transistor

Domen

Miyase

Abe

et al. 2014

IEEE Electron Device Lett.

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“…This can be attributed to the photo-desorption of incorporated hydrogen into the oxide channel layer and the subsequent migration of protons toward the gate insulator/channel interface. 84 Therefore, hydrogen-free or less hydrogen containing SiO x films as a passivation layer are preferred in SiN x films. 85,86 IV.…”

Section: How To Reduce the Nbis Instabilitymentioning

confidence: 99%

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

2013

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Metal oxide optoelectronics is an emerging field that exploits the intriguing properties of the ns orbital-derived isotropic band structure as a replacement for traditional silicon-based electronics in advanced active-matrix information displays. Although the device performance of metal oxide thin film transistors (TFTs) has been substantially improved, the device reliability against external light and gate bias stress remains a critical issue. This paper provides a literature review of light-induced gate bias stress instability in metal oxide TFTs and explain the importance of photo-bias instability in the applications of metal oxide TFTs to optoelectronic device. The rationale of threshold voltage (V th ) instability under the negative bias illumination stress (NBIS) condition is discussed in detail. The charge trapping/injection model, oxygen vacancy photoionization model, and ambient interaction model are described as plausible degradation mechanisms. Finally, the possible approaches to prevent NBIS-induced V th instability are proposed based on an understanding of the NBIS instability.

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“…Amorphous-oxide semiconductors (AOSs) show high sensitivity to hydrogen and oxygen, where the former is commonly considered to be a donor and the latter is an oxygen-vacancy compensator [14]- [16]. These two species are, therefore, used to control the carrier concentration and turn-ON voltage (V ON ) of AOS TFTs.…”

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confidence: 99%

Effect of SiO2 and SiO2/SiN<italic>x</italic> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Chowdhury

Mativenga

et al. 2015

IEEE Trans. Electron Devices

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We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO 2 ) and bilayer (SiO 2 /SiN x ) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts ( V ON ), the size of which increased with storing time. The negative V ON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO 2 passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO 2 passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO 2 interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).Index Terms-Amorphous-indium-gallium zinc oxide (a-IGZO), oxide thin-film transistors (TFT) reliability, SiO 2 and SiN x passivation layer, TFT.

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Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

Cited by 72 publications

References 29 publications

Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga–Zn-O Thin-Film Transistor

Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga–Zn-O Thin-Film Transistor

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

Effect of SiO<sub>2</sub> and SiO<sub>2</sub>/SiN<sub><italic>x</italic></sub> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

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