Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon

Jackson, Warren B.; Marshall, Jessica; Moyer, M. D.

doi:10.1103/physrevb.39.1164

Cited by 179 publications

(65 citation statements)

References 48 publications

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“…In this respect, hydrogenated a-Si transistors are typically affected in fact by critical instability issues that limit their continuous operation. [54][55][56] Such instabilities are due to a high density of deep traps, as suggested by the thermally activated transport that is typically observed for a-Si over a large range of T (from 77 K to 300 K same range as in the present study). [57,58] This contrasts strongly with the temperature-independent mobility observed here for DB-TTF/PS-based OFETs (Fig.…”

Section: Resultsmentioning

confidence: 60%

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Pozo

Fabiano

Pfattner

et al. 2015

Adv Funct Materials

122

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In electronics, the field-effect transistor (FET) is a crucial corner stone and successful integration of this semiconductor device into circuit applications requires stable and ideal electrical characteristics over a wide range of temperatures and environments. Solution processing, using printing or coating techniques, has been explored to manufacture organic field-effect transistors (OFET) on flexible carriers; enabling radically novel electronics applications. Ideal electrical characteristics, in organic materials, are typically only found in single crystals. Tiresome growth and manipulation of these hamper practical production of flexible OFETs circuits. To date, neither devices nor any circuits, based on solution-processed 2 OFETs, has exhibited an ideal set of characteristics similar or better than today's FET technology based on amorphous silicon (a-Si FETs). Here, we report bar-assisted meniscus shearing of dibenzo-tetrathiafulvalene to coat-process self-organized crystalline organic semiconducting domains with high reproducibility. Including these coatings as the channel in OFETs, we observe electric field-and temperature-independent charge carrier mobility and no bias stress effects. Further, we measure record-high gain in OFET inverters and exceptional operational stability in both air and water.

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Section: Resultsmentioning

confidence: 60%

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Pozo

Fabiano

Pfattner

et al. 2015

Adv Funct Materials

122

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“…The time-dependence of the bias stress-induced threshold voltage shift under a constant gate-source voltage and a constant drain-source voltage is typically described by a stretched exponential function [15,16]:…”

Section: Theorymentioning

confidence: 99%

Bias stress effect in low-voltage organic thin-film transistors

et al. 2009

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The bias stress effect in pentacene organic thinfilm transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold voltage shift has been analyzed for different drain-source voltages. By fitting the timedependent threshold voltage shift to a stretched exponential function, both the maximum (equilibrium) threshold voltage shift and the time constant of the threshold voltage shift were determined for each drain-source voltage. It was found that both the equilibrium threshold voltage shift and the time constant decrease significantly with increasing drain-source voltage. This suggests that when a drain-source voltage is applied to the transistor during gate bias stress, the tilting of the HOMO and LUMO bands along the channel creates a pathway for the fast release of trapped carriers.

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“…For a-Si TFTs two major models were developed to explain V th shifts. 11,12 Although the underlying microscopic processes are different, in both models the creation of states is governed by a dispersive process, typical of amorphous materials. These models lead to a differential equation for the density of states created, ⌬N D , which is proportional to ⌬V th , since ⌬N D ϭC OX ⌬V th .…”

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confidence: 99%