Bias stress effect in low-voltage organic thin-film transistors

Zschieschang, Ute; Weitz, R. Thomas; Kern, Klaus; Klauk, Hagen

doi:10.1007/s00339-008-5019-8

Cited by 100 publications

(91 citation statements)

References 31 publications

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“…This could be confirmed by amplitude-modulation atomic force microscopy (AM- content) have a relatively small memory ratio of 2.5 (see Section I in Figure 3b), the devices of series C (5% C 60 content) have a memory ratio of 26 (Section I in Figure 3c), and the devices of series D (100% C 60 content) have an excellent memory ratio of 43 (Section I in Figure 4d). We note, that our observations are different to bias stress-induced threshold voltage shifts in organic transistors, observed at much stronger bias stress conditions 24,25 .…”

contrasting

confidence: 99%

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Burkhardt¹,

Jedaa²,

Novák³

et al. 2010

Advanced Materials

115

121

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Citation for published item:furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVF Further information on publisher's website:httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQH Publisher's copyright statement: his is the epted version of the following rti leX furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVD whi h h s een pu lished in (n l form t httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQHF his rti le m y e used for nonE ommer i l purposes in ord n e ith ileyE gr erms nd gonditions for selfE r hivingFAdditional information:Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. In this work we report on a novel concept of an electrically programmable selfassembled molecular gate dielectric layer for OTFTs (see figure 1a) that can be reversibly charged and discharged and retains these digital states even when the supply voltage is removed. Due to the small thickness of the dielectric stack (app. 5.7 nm), the memory transistors operate with very small program and erase voltages of ± 2 V. Despite the extremely small dielectric thickness, the retention time is already promising (~6 hours with a read voltage of -750 mV applied continuously). The dielectric is a mixed monolayer of aliphatic and C 60 -functionalized phosphonic acid molecules (app. 2.1 nm thickness) on a patterned and plasma-oxidized aluminum gate electrode on a glass substrate. The aluminum oxide (AlO x ) contributes with a thickness of 3.6 nm to the dielectric layer stack 6 . As the aliphatic component, n-octadecylphosphonic acid 1 was chosen, which has already shown excellent insulating characteristics as the gate dielectric 6 . As the charge storage component, the C 60 -derivative 2 was synthesized to take advantage of the strong acceptor properties and reversible redox behavior of C 60 (Figure 1b and Supplementary Information SI-1) and of the self-assembly properties induced by the C 18 -aliphatic tail with phosphonic acid anchor group.Mixed self-assembled monolayers of 1 and 2 were created by a simple "one pot" solution content) have a relatively small memory ratio of 2.5 (see Section I in Figure 3b), the devices

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contrasting

confidence: 99%

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Burkhardt¹,

Jedaa²,

Novák³

et al. 2010

Advanced Materials

115

121

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“…In general, the V th -shift is addressed to rely on dipole moments of the SAM-molecules or field-induced charging of interface traps during operation ͑bias stress effect͒. 9,22 For the reference sample a corresponding field effect mobility ͑͒ of 0.003 cm 2 / V s was calculated, for the SAM treated samples = 0.018 cm 2 / V s ͑PHDA͒, and a maximum value of = 0.024 cm 2 / V s was obtained for both, the F 15 C 18 -PA-and C 10 -PA-samples.…”

mentioning

confidence: 99%

Influence of self-assembled monolayer dielectrics on the morphology and performance of α,ω-dihexylquaterthiophene in thin film transistors

Novák

Schmaltz

Faber

et al. 2011

Applied Physics Letters

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Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 101, 182106 (2012) Development of shock waves in traveling-wave field-effect transistors J. Appl. Phys. 112, 084914 (2012) Defeating the trade-off between process complexity and electrical performance with vertical zinc oxide transistors Appl. Phys. Lett. 101, 183503 (2012) Design rules of (Mg,Zn)O-based thin-film transistors with high-κWO3 dielectric gates

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“…A high-voltage op-amp (Texas Instruments OPA445AP) is used to amplify a zero-offset, lowfrequency (f = 6 Hz) sine drive provided by the Picoscope waveform generator, to extend the limited voltage amplitude of its output. A zero-offset sine waveform is chosen to minimise gate dielectric stress (Zschieschang et al, 2009) thanks to its symmetry, and to avoid higher harmonics. The amplified sinusoidal drive signal, V in (= V MAX sin(ω(t))), is fed into the source of the OTFT under test, while the gate is connected to the electrical ground and the drain is connected to virtual ground (see below).…”

Section: Real-time Electrical Characterisationmentioning

confidence: 99%

An electrical characterisation system for the real-time acquisition of multiple independent sensing parameters from organic thin film transistors

Dragoneas

Hague

Grell

2015

J. Sens. Sens. Syst.

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Abstract. The presence of multiple independent sensing parameters in a single device is the key conceptual advantage of sensor devices based on an organic thin film transistor (OTFT) over simple organic chemiresistors. Practically, however, these multiple parameters must first be extracted from the electrical characteristics of the OTFTs and, thus, they are not immediately apparent. To exploit the advantage of OTFT sensors, we require a measurement technology to extract these parameters in real time. Here, we introduce an efficient, cost-effective system that is a faster and more compact alternative to the expensive and cumbersome laboratory-based instruments currently available. The characterisation system presented here records the electric behaviour of OTFTs in the form of its "saturated transfer characteristics" multiple times per second for virtually unlimited periods of time, with the option to multiplex up to 20 devices in parallel. By applying a bespoke algorithm to the measured transfer characteristics, the system then extracts, in real time, several underlying transistor parameters (on-and off-current, threshold voltage, and charge carrier mobility). Tests were conducted on the example of a poly(thieno[3,2-b]thiophene) (PBTTT) OTFT exposed to ethanol vapour. The system extracts the underlying OTFT parameters with very low noise without introducing apparent correlations between independent parameters as an artefact.

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Bias stress effect in low-voltage organic thin-film transistors

Cited by 100 publications

References 31 publications

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Influence of self-assembled monolayer dielectrics on the morphology and performance of α,ω-dihexylquaterthiophene in thin film transistors

An electrical characterisation system for the real-time acquisition of multiple independent sensing parameters from organic thin film transistors

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