Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array

Dubecký, F.; Boháček, P.; Затько, Б.; Sekacova, M.; Huran, J.; Šmatko, V.; Fornari, R.; Gombia, E.; Mosca, R.; Pelfer, P. G.

doi:10.1016/j.nima.2004.06.107

Cited by 7 publications

(2 citation statements)

References 17 publications

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“…Metal phosphides are functional materials used in a broad range of applications, including high-energydensity supercapacitors and lithium battery electrodes [1][2][3], low-cost, high-efficiency catalysts [4], high-efficiency solar cell electrodes [5], radiation detectors [6], and wear-resistant thin films [7]. Metal phosphides are fabricated by a variety of methods.…”

Section: Introductionmentioning

confidence: 99%

Effect of Synthesis Temperature on the Composition of Electrolytic Iron Phosphide

Kim¹,

Shin²

2018

J. Electrochem. Sci. Technol

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In this study, we investigated the composition of an electrolytic Fe phosphide at different synthesis temperatures. We found that the ratio of Fe in the electrodeposit increases with synthesis temperature, whereas the oxygen content introduced into the electrodeposit by the atmospheric oxidation of Fe decreases. The aim of this study was to identify the reason for this effect. For this purpose, the ratio of Fe and P in the electrodeposits prepared at different temperatures was analyzed in depth. In addition, the types and ratios of Fe phosphide phases were considered. It was proved that with increase in temperature, a significant amount of Fe reacted with P to form Fe phosphide phases, and consequently, the amount of residual pure Fe that would react directly with oxygen decreased.

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Section: Introductionmentioning

confidence: 99%

Effect of Synthesis Temperature on the Composition of Electrolytic Iron Phosphide

Kim¹,

Shin²

2018

J. Electrochem. Sci. Technol

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“…InP radiation detector with the best performance reported until now 6 -8 was fabricated in our laboratory. However, the achievement of really good blocking electrodes in SI InP-based detectors is still an open question 7,8 and should be the object of future studies.…”

Section: Introductionmentioning

confidence: 99%

Study of radiation detectors based on semi-insulating GaAs and InP: aspects of material and electrode technology

Dubecký¹,

Nečas

2007

SPIE Proceedings

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In this work, the most important aspects of semi-insulating (SI) GaAs and SI InP-based radiation detectors will be listed. Based on that, the material and technology requirements will be identified. Further, the status of development of X-and gamma-ray detectors based on the bulk SI GaAs and SI InP will be reviewed. The emphasis will be concentrated on the following important aspects: (i) basic material characteristics, (ii) role of the electrodes (blocking contacts, ohmic contacts) in the overall performances of detectors. The fabrication technology and the performances of detectors and their application in the first quantum X-ray digital scanner recently developed will also be illustrated along with some conclusions about the material/application relations: (i) radiation detectors based on bulk SI GaAs may readily find applications in X-ray digital radiology imaging systems, whilst (ii) SI InP-based detectors are very promising but need further development to reach performances suitable for the application.

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High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C

Gál

Hrubčín

Šagátová

et al. 2023

Applied Surface Science

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Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array

Cited by 7 publications

References 17 publications

Effect of Synthesis Temperature on the Composition of Electrolytic Iron Phosphide

Effect of Synthesis Temperature on the Composition of Electrolytic Iron Phosphide

Study of radiation detectors based on semi-insulating GaAs and InP: aspects of material and electrode technology

High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C

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