High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C

Gál, N.; Hrubčín, L.; Šagátová, Andrea; Vanko, G.; Kováčová, Eva; Затько, Б.

doi:10.1016/j.apsusc.2023.157708

Cited by 8 publications

(3 citation statements)

References 37 publications

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“…The single-pad Schottky barrier SiC detectors were developed to investigate and optimise their electrical and detection properties. The evaluation of 4H-SiC Schottky barrier detector performance at elevated temperatures is presented in [12], where we demonstrated the detector's operation up to 500 • C. At this high-temperature, the FWHM degraded ∼20% when compared to its performance at room temperature. The 4H-SiC detectors have been proven to be suitable for high-resolution spectrometry of alpha particles in a wide range of elevated temperatures.…”

Section: Instrumentation and Experimentsmentioning

confidence: 96%

“…The SiC sensor with a 3.23 eV band gap also offers a high breakdown voltage (4 × 10 6 V m −1 ), which allows the application of a large bias voltage that leads to fast charge collection. It has been demonstrated that the energy resolution performance of SiC is not degraded even at elevated temperatures up to hundreds of degrees Celsius [12]. Furthermore, the material itself has high electron mobility (around 900 cm 2 V −1 s −1 ) and high electron saturation drift velocity (2 × 10 7 cm −1 ).…”

Section: Introductionmentioning

confidence: 99%

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Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view

Novak,

Granja,

Sagatova

et al. 2023

J. Inst.

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The hybrid architecture of the Timepix (TPX) family of detectors enables the use of different semiconductor sensors, most commonly silicon (Si), as well as high-density materials such as Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs). For this purpose, we explore the potential of a silicon carbide (SiC) sensor bump-bonded on a Timepix3 detector as a radiation imaging and particle tracking detector. SiC stands as a radiation-hard material also with the ability to operate at elevated temperatures up to several hundreds of degrees Celsius. As a result, this sensor material is more suitable for radiation harsh environments compared to conventional e.g., Si sensors. In this work, we evaluate the response for precise radiation spectrometry and high-resolution particle tracking of newly developed SiC Timepix3 detector which is built and operated as a compact radiation camera MiniPIX-Timepix3 with integrated readout electronics. Calibration measurements were conducted with mono-energetic proton beams with energies of 13, 22, and 31 MeV at the U-120M cyclotron at the Nuclear Physics Institute Czech Academy of Science (NPI CAS), Prague, as well as 100 and 226 MeV at the Proton Therapy Center Czech (PTC) in Prague. High-resolution pattern recognition analysis and single-particle spectral tracking are used for detailed inspection and understanding of the sensor response. Results include distributions of deposited energy and linear energy transfer (LET) spectra. The spatial uniformity of the pixelated detector response is examined in terms of homogeneously distributed deposited energy.

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Section: Instrumentation and Experimentsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view

Novak,

Granja,

Sagatova

et al. 2023

J. Inst.

View full text Add to dashboard Cite

show abstract

“…The material exhibits many favourable properties, such as the chemical and temperature stability, radiation hardness, and it can be prepared with high quality. 4H-SiC detectors can operate with high energy resolution at temperatures up to several hundred degrees Celsius [1]. Electrical properties of Schottky barrier detectors were investigated at room temperature and elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

Imaging and spectrometric performance of SiC Timepix3 radiation camera

Zaťko,

Šagátová,

Hrubčín

et al. 2024

J. Inst.

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A Schottky barrier radiation detector and pixel imaging sensor fabricated from epitaxially grown SiC semiconductor were analyzed. The detector was based on an 80 μm thick epitaxial SiC layer. Capacitance-voltage measurement was performed to study the thickness of the space charge region of the detector as a function of applied bias. The results showed that the detector was completely depleted at a reverse bias higher than 300 V. The impurity concentration profile was also calculated, which indicated a net impurity concentration below 1.5×1014 cm-3. A prototype of a SiC Timpix3 radiation camera was fabricated, and its energy resolution was investigated using the 241Am radioisotope. The camera exhibited an energy resolution of 4.5 keV for 60 keV gamma photons. X-ray fluorescence photons (from 14 keV to 22 keV) were detected with a resolution below 2.0 keV. The imaging quality of the camera was investigated using a test object. The prototype showed a high-quality image performance with a stable count rate, which was determined from uniform intensity profiles extracted from parts of the test object image. A disadvantage of this prototype is that the radiation hits the detector from the side of the substrate and only then it reaches its active SiC epitaxial layer. This represents a dead layer that reduced the detection efficiency of X-rays below 10 keV.

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Interfacial Si–O coordination for inhibiting the graphite phase enables superior SiC/Nb heterostructure joining by AuNi

Yan,

Li,

Zhang

et al. 2024

Composites Part B: Engineering

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High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C

Cited by 8 publications

References 37 publications

Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view

Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view

Imaging and spectrometric performance of SiC Timepix3 radiation camera

Interfacial Si–O coordination for inhibiting the graphite phase enables superior SiC/Nb heterostructure joining by AuNi

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