Role of Electrode Contamination in Electron Injection at Mg:Ag/Alq3 Interfaces

Abstract

Fig. 4). These results explicitly indicate that Sc 3+ ions migrated to the cathodic side, due to electrolysis, and deposited on the cathodic surface, and the mobile cationic species in Sc 1/3 Zr 2 (PO 4 ) 3 can be directly identified as Sc 3+ ions. 1523Communications Fig. 4. The results of the EPMA spot analysis of the cathodic surface after (a) and before (b) electrolysis.

Electronic structure, diffusion, and p-doping at the Au/F16CuPc interface

“…This is to be contrasted with the previously reported extrinsic effects due, for example, to contamination of an electrode in poor vacuum. 16 We also recently reported symmetric I-V characteristics for Mg͑Al͒/Alq 3 /Mg͑Al͒ structures grown in ultrahigh vacuum. In this case, identical Fermi level interface positions are obtained at both interfaces as a result of electronic gap states induced by the strong metal-molecule chemistry.…”

“…The UPS spectra and energy diagram corresponding to the formation of the Au-doped F 16 CuPc layer are shown in Figs. 4͑a͒ and 4͑b͒, respectively.…”

“…The I-V measurements are performed on Au/ F 16 CuPc/Au devices grown in the growth chamber and consisting of a 400 Å bottom Au electrode, a 2000 Å layer of F 16 CuPc, and 400 Å top Au electrode. The top electrode is evaporated through a shadow mask with an array of 0.78, 0.13, and 0.0078 mm 2 round apertures.…”

Surface Raman Spectroscopy of the Interface of Tris-(8-hydroxyquinoline) Aluminum with Mg

“…Sakurai et al examined K-Alq 3 complexes by IR and Raman spectroscopy and observed formation of an ionic complex in which, following a charge transfer reaction, Alq 3 -· is present associated with K + counterions. 31 In a previous report from this laboratory, Raman spectroscopy of the Al-Alq 3 system suggested formation of an Al-Alq 3 complex with Al covalently bound to two O atoms of 8-HQ. 17 Significantly, Raman spectral modes of graphitic carbon were also observed for the first time in this system indicating partial decomposition of Alq 3 upon Al deposition.…”

High luminance efficiency and low voltage organic light-emitting diodes with NPB/LiF multiple layers

“…One can insert a thin interlayer between cathode and ETL to improve electron injection [5]. Other commonly used methods to improve hole injection in OLEDs is to insert thin insulating buffer layers, such as LiF, CsF, SiO x N y , SiO 2 , NaCl, and sodium stearate, so as to enhance the current injection and to lower the operating voltage between indium-tin-oxide (ITO) electrodes and HTL [6][7][8][9][10][11]. Among those, LiF with proper thickness deposited on ITO anode is the most effective way to improve hole-injection.…”