2001
DOI: 10.1063/1.1406967
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Electronic structure, diffusion, and p-doping at the Au/F16CuPc interface

Abstract: Role of metal-molecule chemistry and interdiffusion on the electrical properties of an organic interface: The Al-F 16 CuPc case

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Cited by 116 publications
(63 citation statements)
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References 13 publications
(19 reference statements)
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“…[26][27][28] The absence of complementary functional groups and dipolar moments in both DIP and F 16 CuPc limits the intermolecular interactions in single-component layers to weak van der Waals interactions and steric effects. In a first step, the respective film structures have been characterized by complementary STM and LEED measurements.…”
Section: Resultsmentioning
confidence: 99%
“…[26][27][28] The absence of complementary functional groups and dipolar moments in both DIP and F 16 CuPc limits the intermolecular interactions in single-component layers to weak van der Waals interactions and steric effects. In a first step, the respective film structures have been characterized by complementary STM and LEED measurements.…”
Section: Resultsmentioning
confidence: 99%
“…The asymmetric characteristic of the undoped NTCDA device shows higher current density at high fields for top-contact injection, and is indicative of the formation of an inhomogeneous top contact. One possibility is that the threedimensional growth of NTCDA added to some interface diffusion of Au [20] results in the formation of sharp interface morphological features, which concentrate electric-field lines and enhance carrier injection from the top contact. In contrast, the current behavior of the doped device is uniform for both top and bottom injection.…”
Section: I-v Measurementsmentioning
confidence: 99%
“…[24] On the other hand, there is a new, 0.3 eV electron-injection barrier, due to the lowest unoccupied molecular orbital (LUMO) of F 16 CuPc (4.8 eV). [25] However, the injection barrier displays a strong dependence on the electric field, which can be reduced by increasing the gate and drain voltages in OFETs. In addition, the small injection barrier can also be overcome by charge tunneling.…”
Section: Introductionmentioning
confidence: 99%