Role of E-E scattering in the enhancement of channel hot carrier degradation of deep-submicron NMOSFETs at high V/sub GS/ conditions

Effect of electron–electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs

“…The EES rate is reported to increase at high values of V g where the concentration of electrons in the channel is high [4]. Moreover, EES enhances device degradation by generating N it [3,5]. These facts indicate that EES stress causes more device damage than does CHC stress.…”

“…A shift of I GIDL (DI GIDL ) indicates the generation of Q ox at the gate-drain overlap region because Q ox increases I GIDL by increasing the surface potential of the drain [14]. Rauch III et al reported simulation results showing that the gate-drain overlap region is where EES contributes most to HC degradation [5]. From this fact, the measured DI GIDL under EES stress includes the effect of EES.…”

“…Several researchers have studied CHC effects over a large range of both gate V g and drain voltages V d [4,5]. According to these studies, CHC stress is the worst stress condition for a short channel device [1][2][3][4][5].…”

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

“…Although the electron-hole pairs generated by impact ionization are much more in DAHC condition than CHC condition, the degradation of V th is worsened in CHC condition. This is explained by the electron-electron scattering (EES) [11]. High V g induces the increase in channel electron concentration, so a higher EES rate per electron is driven.…”

Transistor Degradations in Very Large-Scale-Integrated CMOS Technologies

“…(3) reflecting a statistical interaction of two independent sources for EES. This secondly found hot carrier generation mechanism dominates in the sub-micrometer range-scaled MOSFETs whose drain currents have a range between 40 and 500 μA/μm with high V GS drive [11,12].…”