The growth habit of UO~ on uranium during the oxidation by water vapor has been analyzed with the aid of detailed x-ray diffraction work and pole figures. The dioxide grows with a (110) planar texture which bears no epitaxial relation to the underlying metal crystallites. Although the polycrystalline alpha uranium has a strong and anisotropic preferred orientation as a result of fabrication, the oxide forms without azimuthal directionality in the plane of contact. The lack of alignment in the plane of contact also was confirmed in an experiment with a single crystal of uranium.The texture of UO~ formed during annealing in vacuum also was found to be planar without significant directionality. In such cases, the (100) planes were parallel to the surface of the metal substrate, and large amounts of uranium monoxide always were present in such films. Subsequent oxidation of specimens covered with the (100) texture yielded the characteristic (110) dioxide texture.In incidental experimental work on the vapor deposition of UO.., the octahedral or (111) texture was observed on glass and tantalum substrates, and the cubic or (100) texture was developed on several ionic substrates.In a preliminary investigation, the rate law for the formation of uranium dioxide under conditions which produce such oriented films was found to be logarithmic.