Robustness of topological states in Bi2Se3 thin film grown by Pulsed Laser Deposition on (0 0 1)-oriented SrTiO3 perovskite

Bigi, Chiara; Orgiani, P.; Nardi, A.; Troglia, Alessandro; Fujii, Jun; Panaccione, G.; Vobornik, I.; Rossi, G.

doi:10.1016/j.apsusc.2018.12.119

Cited by 17 publications

(6 citation statements)

References 38 publications

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“…1), performed by means of the IMD package in the XOP software [18,19], fully match the design value of 30 nm. XRR oscillations are recorded up to 2θ values of 4 • , while, above this angle, the oscillations fall below the experimental sensitivity of the x-ray diffractometer [17,20,21]. In situ scanningtunneling-microscopy (STM) experiments are performed with an atomic-resolution UHV apparatus, immediately after the growth of the samples.…”

Section: A Growth and Structural Characterizationmentioning

confidence: 99%

Tuning the Optical Absorption of Anatase Thin Films Across the Visible-To-Near-Infrared Spectral Region

et al. 2020

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The electronic properties of anatase titanium dioxide (TiO 2 ) thin films epitaxially grown on LaAlO 3 substrates are investigated by synchrotron-x-ray spectroscopy [x-ray absorption spectroscopy (XAS), xray photoemission spectroscopy (XPS), and angle-resolved photoemission spectroscopy (ARPES)] and infrared spectroscopy. The Ti 3+ fraction in TiO 2−x is varied either by changing the oxygen pressure during deposition or by postgrowth annealing in ultrahigh vacuum (UHV). Structural investigation of the TiO 2 thin films provides evidence of highly uniform crystallographic order in both as-grown and in situ UHVannealed samples. The increased amount of Ti 3+ as a consequence of UHV annealing is calibrated by in situ XPS and XAS analysis. The as-grown TiO 2 samples, with a low Ti 3+ concentration, show distinct electronic properties with respect to the annealed films, namely, absorption in the midinfrared (MIR) region correlated with polaron formation, and another peak in the visible range at 1.6 eV correlated with the presence of localized defect states (DSs). With the increasing level of Ti 3+ induced by the postannealing process, the MIR peak disappears, while the DS peak is redshifted to the near-infrared region at about 1.0 eV. These results indicate the possibility of tailoring the optical absorption of anatase TiO 2 films from the visible to the near-infrared region.

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Section: A Growth and Structural Characterizationmentioning

confidence: 99%

Tuning the Optical Absorption of Anatase Thin Films Across the Visible-To-Near-Infrared Spectral Region

et al. 2020

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“…On the other hand, unlike crystal exfoliation, the growth of films provides a high control on thickness down to few nanometers, which represents an opportunity for the observation and tuning of interesting effects. Several growth techniques such as molecular beam epitaxy (MBE) [ 30 , 31 , 32 ] or pulsed laser deposition (PLD) [ 33 , 34 ] have proven to be good tools for the study of TI thin films, allowing for the use of different substrates and also the growth of heterostructures. However, the number of defects in the films is still high, and the surface–carrier mobilities are still low, placing TIs far from the technological scenario.…”

Section: Introductionmentioning

confidence: 99%

Omnipresence of Weak Antilocalization (WAL) in Bi2Se3 Thin Films: A Review on Its Origin

et al. 2021

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Topological insulators are materials with time-reversal symmetric states of matter in which an insulating bulk is surrounded by protected Dirac-like edge or surface states. Among topological insulators, Bi2Se3 has attracted special attention due to its simple surface band structure and its relatively large band gap that should enhance the contribution of its surface to transport, which is usually masked by the appearance of defects. In order to avoid this difficulty, several features characteristic of topological insulators in the quantum regime, such as the weak-antilocalization effect, can be explored through magnetotransport experiments carried out on thin films of this material. Here, we review the existing literature on the magnetotransport properties of Bi2Se3 thin films, paying thorough attention to the weak-antilocalization effect, which is omnipresent no matter the film quality. We carefully follow the different situations found in reported experiments, from the most ideal situations, with a strong surface contribution, towards more realistic cases where the bulk contribution dominates. We have compared the transport data found in literature to shed light on the intrinsic properties of Bi2Se3, finding a clear relationship between the mobility and the phase coherence length of the films that could trigger further experiments on transport in topological systems.

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“…[33][34][35] To obtain a greater transport contribution from the topological SS, it is important to obtain TI thin lms with a high crystallization quality. The methods usually used for preparing TI thin lms include molecular beam epitaxy (MBE), 33,[36][37][38][39][40] chemical vapor deposition, [41][42][43][44] physical vapor deposition, [45][46][47][48] pulsed laser deposition (PLD) [49][50][51][52][53][54][55][56][57][58][59][60] and sputtering. 61,62 The MBE is the method mainly used to obtain at and thin TI lms for fundamental research, because of its advantages of 2D growth, single crystal yield and easily controlled doping.…”

Section: Introductionmentioning

confidence: 99%

“…In a recently published paper on depositing TI lms using PLD, the root square mean deviation of roughness (R q ) was decreased to 0.5-0.7 nm, but there existed more than four steps of QL at the surface. 60 It is necessary to use at thin TI lm with a large area as the bottom or middle layer of the heterostructure in devices for spintronics. [64][65][66][67] Investigating better preparation conditions using PLD for TI thin lms with at surfaces is a signicant area of research.…”

Section: Introductionmentioning

confidence: 99%

The dimensional crossover of quantum transport properties in few-layered Bi₂Se₃ thin films

Yang

Wang

et al. 2019

Nanoscale Adv.

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Robustness of topological states in Bi2Se3 thin film grown by Pulsed Laser Deposition on (0 0 1)-oriented SrTiO3 perovskite

Cited by 17 publications

References 38 publications

Tuning the Optical Absorption of Anatase Thin Films Across the Visible-To-Near-Infrared Spectral Region

Tuning the Optical Absorption of Anatase Thin Films Across the Visible-To-Near-Infrared Spectral Region

Omnipresence of Weak Antilocalization (WAL) in Bi2Se3 Thin Films: A Review on Its Origin

The dimensional crossover of quantum transport properties in few-layered Bi₂Se₃ thin films

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Robustness of topological states in Bi2Se3 thin film grown by Pulsed Laser Deposition on (0 0 1)-oriented SrTiO3 perovskite

Cited by 17 publications

References 38 publications

Tuning the Optical Absorption of Anatase Thin Films Across the Visible-To-Near-Infrared Spectral Region

Tuning the Optical Absorption of Anatase Thin Films Across the Visible-To-Near-Infrared Spectral Region

Omnipresence of Weak Antilocalization (WAL) in Bi2Se3 Thin Films: A Review on Its Origin

The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films

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The dimensional crossover of quantum transport properties in few-layered Bi₂Se₃ thin films