2022
DOI: 10.1109/lmag.2022.3202135
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Robustness of Binary Stochastic Neurons Implemented With Low Barrier Nanomagnets Made of Dilute Magnetic Semiconductors

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Cited by 5 publications
(3 citation statements)
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“…Another is to replace common ferromagnets used in MTJs with dilute magnetic semiconductors which have several orders of magnitude lower saturation magnetization. That makes the energy barriers in the nanomagnets much less sensitive to shape and size variations and suppresses device-to-device variations [10].…”
Section: Current and Future Challengesmentioning
confidence: 99%
“…Another is to replace common ferromagnets used in MTJs with dilute magnetic semiconductors which have several orders of magnitude lower saturation magnetization. That makes the energy barriers in the nanomagnets much less sensitive to shape and size variations and suppresses device-to-device variations [10].…”
Section: Current and Future Challengesmentioning
confidence: 99%
“…On the other hand, using nanodevices such as CMOScompatible stochastic magnetic tunnel junctions (sMTJ), millions of p-bits can be accommodated in single cores due to the scalability achieved by the MRAM technology, exceeding 1Gbit MRAM chips [56,57]. However, before the stable MTJs can be controllably made stochastic, challenges at the material and device level must be addressed [58,59] with careful magnet design [60][61][62]. Different flavors of magnetic p-bits exist [63][64][65][66], for a recent review, see Ref.…”
Section: Hardware: Physical Implementation Of P-bits a P-bitmentioning
confidence: 99%
“…(ii) Additionally, it is difficult to fabricate a chip with a tight statistical distribution around a small energy barrier for all devices, further limiting the sampling rate and the number of p-bits achievable on a chip. Materials with small saturation magnetization, such as dilute magnetic semiconductors, have been proposed as a potential solution to the problem of device-to-device variation [24]. However, realizing this potential requires large room-temperature tunneling magnetoresistance in these material systems, which has not been experimentally realized to date [25,26].…”
Section: Introductionmentioning
confidence: 99%