Robust multilevel interconnects with a nano-clustering porous low-k (k&amp;gt;2.3)

Nakamura, Tomoji; Nakashima, Akira

doi:10.1109/iitc.2004.1345733

Cited by 15 publications

(12 citation statements)

References 5 publications

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“…In Appendix, we give detailed numerical data Z n and Moments λ 4 /λ 2 for RHIC data. Part of the results here were reported in several proceedings [11,12]. : Experimental multiplicity data P n , and Z n = P n /ξ n for √ s N N = 39 GeV.…”

Section: Introductionmentioning

confidence: 99%

Probing QCD phase structure using baryon multiplicity distribution

Nakamura

Nagata

2016

Prog. Theor. Exp. Phys.

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We propose a new method to construct canonical partition functions of QCD from net number distributions such as the net-baryon, net-charge and net-strangeness, by using only the CP symmetry. To demonstrate the method, we apply it to the net-proton number distribution Pn recently measured at RHIC. We show that both µ/T and the canonical partition functions Zn are determined by using the CP invariance Zn = Z−n.Comparing µ/T obtained from the present analysis for the net-proton distribution and that obtained from a thermal statistical model, we find remarkable agreement for wide range of beam energies. Constructing a grand canonical partition function Z(µ, T ) = n Zn(T )ξ n , we study moments and Lee-Yang zeros for RHIC data, and discuss possible regions of a phase transition line in QCD. This is the first Lee-Yang zero diagram obtained for RHIC data, which helps us to see contributions of large net-proton data for exploring the QCD phase diagram.We also calculate Zn by the lattice QCD simulations, and find a clear indication of Roberge-Weiss phase transition in the QGP phase. The method does not rely on the Taylor expansions, which prevent us to go to large µ/T .

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Section: Introductionmentioning

confidence: 99%

Probing QCD phase structure using baryon multiplicity distribution

Nakamura

Nagata

2016

Prog. Theor. Exp. Phys.

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“…The incident angle was fixed at 70°, and the polariser transmission axis was oriented at 45° relative to the incidence plane. Organosilica-based spin-on porous low-k films, the equivalent of Non Clustering Silica™, were supplied by CCIC Corp. in Japan [5] and used as specimens. The porosity and pore diameter were approximately 30 % and 2 nm, respectively, and the refractive index at 633 nm was 1.30+0.00i.…”

Section: Methodsmentioning

confidence: 99%

Condensation and cleaning of an organometallic copper compound to/from porous low‐dielectric constant thin films in supercritical carbon dioxide

Kondoh

Ukai

Aruga

2008

Phys. Status Solidi (c)

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Porous low‐dielectric‐constant (low‐k) thin films are demanded as insulating material for high‐performance integrated circuits. One of the key technologies matching low‐k processing is the use of supercritical carbon dioxide (scCO2) fluids. ScCO2 has a nano‐penetration capability as well as solvent capability, which makes it a promising medium for the cleaning and modification of low‐k pores. However, few studies have been reported so‐far on in‐situ ellipsometric measurement within supercritical fluids. We have developed an in‐situ ellipsometry technique for use in scCO2. In this ar‐ticle, the sorption behaviour of an organometallic compound, Cu(dibm)2, on organosilica‐based low‐k thin films is reported as a model case of Cu contamination and the cleaning of low‐k pores. Reversible adsorption/desorption behaviour was observed when the amount of Cu(dibm)2 loaded was low, while less reversibility was observed when a larger amount of Cu(dibm)2 was used. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…This success of the simpler and hence, manufacturable integration with less materials and interfaces is attributed to the capability of modern dry etching tools which have controllability and uniformity across the wafer enough to support the pattern definition in the monolithic damascene scheme. Another example to show the strong dependency on the tool/material/process capability and readiness is the across-the-wafer non-uniformity of modern CMP tools which so far seem unable to support the Hard Mask Retention scheme for the use of ULK at the trench level for the 65 nm node BEOL technologies in the manufacturing phase, although a bunch of damascene schemes have been reported [18][19][20][21][22][23][24].. Thus, discussions on possibility of implementation of ULK in the 45 nm node BEOL must be made on certain assumptions about the tool capability/readiness and limitation for manufacturing [25][26][27].…”

Section: Technical Challenges To the 45 Nm Beol Processmentioning

confidence: 97%

Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

Nogami

Lane²,

Fukasawa

et al. 2005

SPIE Proceedings

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This paper discusses low-k/copper integration schemes which has been in production in the 90 nm node, have been developed in the 65 nm node, and should be taken in the 45 nm node. While our baseline 65 nm BEOL process has been developed by extension and simple shrinkage of our PECVD SiCOH integration which has been in production in the 90 nm node with our SiCOH film having k=3.0, the 65 nm SiCOH integration has two other options to go to extend to lower capacitance. One is to add porosity to become ultra low-k (ULK). The other is to stay with low-k SiCOH, which is modified to have a "lower-k". The effective k-value attained with the lower-k (k=2.8) SiCOH processed in the "Direct CMP" scheme is very close to that with an ULK (k=2.5) SiCOH film built with the "Hard Mask Retention" scheme. This paper first describes consideration of these two damascene schemes, whose comparison leads to the conclusion that the lower-k SiCOH integration can have more advantages in terms of process simplicity and extendibility of our 90 nm scheme under certain assumptions. Then describing the k=2.8 SiCOH film development and its successful integration, damascene schemes for 45nm nodes are discussed based on our learning from development of the lower-k 65nm scheme. Capability of modern dry etchers to define the finer patterns, nonuniformity of CMP, and susceptibility to plasma and mechanical strength and adhesion of ULK are discussed as factors to hamper the applicability of ULK.

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Robust multilevel interconnects with a nano-clustering porous low-k (k>2.3)

Cited by 15 publications

References 5 publications

Probing QCD phase structure using baryon multiplicity distribution

Probing QCD phase structure using baryon multiplicity distribution

Condensation and cleaning of an organometallic copper compound to/from porous low‐dielectric constant thin films in supercritical carbon dioxide

Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

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