Condensation and cleaning of an organometallic copper compound to/from porous low‐dielectric constant thin films in supercritical carbon dioxide

Abstract

Porous low‐dielectric‐constant (low‐k) thin films are demanded as insulating material for high‐performance integrated circuits. One of the key technologies matching low‐k processing is the use of supercritical carbon dioxide (scCO2) fluids. ScCO2 has a nano‐penetration capability as well as solvent capability, which makes it a promising medium for the cleaning and modification of low‐k pores. However, few studies have been reported so‐far on in‐situ ellipsometric measurement within supercritical fluids. We have developed an in‐situ ellipsometry technique for use in scCO2. In this ar‐ticle, the sorption behaviour of an organometallic compound, Cu(dibm)2, on organosilica‐based low‐k thin films is reported as a model case of Cu contamination and the cleaning of low‐k pores. Reversible adsorption/desorption behaviour was observed when the amount of Cu(dibm)2 loaded was low, while less reversibility was observed when a larger amount of Cu(dibm)2 was used. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

[Pb(Tab)2(4,4′-bipy)](PF6)2: two-step ambient temperature quantitative solid-state synthesis, structure and dielectric properties

“…Low-k materials have been known to decrease power dissipation, resistance-capacitance (RC) delays, and cross-talk noise when incorporated in the device systems. 8 To date, various low-k materials including inorganosilica 9 and organosilica, 10 aromatic polymers, 11 fluorinated polymers, 12 polyimides, 13 low-dimensional nanomaterials, 14 and copper and aluminium composites 15 have been investigated for these purposes. However, coordination compounds used for low-k materials are less explored.…”