Ring-Resonator Based Widely-Tunable Narrow-Linewidth Si/InP Integrated Lasers

Tran, Minh A.; Huang, Duanni; Guo, Joel; Komljenović, Tin; Morton, Paul A.; Bowers, John E.

doi:10.1109/jstqe.2019.2935274

Cited by 110 publications

(87 citation statements)

References 51 publications

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“…, where R f is the end mirror reflectance and T f (ω) is the single-pass transmittance of the Vernier filter having a spectral bandwidth ∆ν f . order of hundreds of kilohertz [84,99] the lowest value obtained with silicon is now 220 Hz [114].…”

Section: State Of the Artmentioning

confidence: 90%

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Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

et al. 2019

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Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 µm wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.

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Section: State Of the Artmentioning

confidence: 90%

“…Besides using Bragg waveguides from Si [86,96,109,106], polymer [110,89], or doped silica (SiO2) [111,112,62], spectral filtering and extending the cavity length has mostly been based on microring resonators, employing Si waveguides [113,84,93,114], SiON [80], SiO2 [92] and Si3N4 [82,87,99]. While initially the linewidth was in the…”

Section: State Of the Artmentioning

confidence: 99%

Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

et al. 2019

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“…Since the tuning sensitivity is independent of the length of the microring resonators, this allows independent optimization of intrinsic phase stability and continuous tuning sensitivity. For further linewidth narrowing, the cavity length of a laser can be increased without a penalty in the range of continuous tuning, e.g., by increasing the ring diameter, lowering the bus to ring waveguide coupling constants or by adding extra rings [28,29]. The tuning sensitivity and hence the range of continuous tuning can be increased by shortening the length of bus waveguides not used as phase section.…”

Section: Discussionmentioning

confidence: 99%

Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser

Rees¹,

Fan²,

Geskus³

et al. 2020

Opt. Express

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Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. We present a method that increases the range of continuous tuning to that of a short equivalent laser cavity, while maintaining the ultra-narrow linewidth of a long cavity. Using a single-frequency hybrid integrated InP-Si3N4 diode laser with 120 nm coverage around 1540 nm, with a maximum output of 24 mW and lowest intrinsic linewidth of 2.2 kHz, we demonstrate a six-fold increased continuous and mode-hop-free tuning range of 0.22 nm (28 GHz) as compared to the free-spectral range of the laser cavity. arXiv:1912.09455v1 [physics.optics]

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“…Currently, the most common tunable lasers come in the form of either ring‐based lasers, distributed Bragg reflector (DBR) lasers, including those integrated on Si through wafer bonding, sampled‐grating distributed Bragg reflectors (SGDBR), or digital super‐mode DBRs that are fabricated through multiple regrowth steps on native substrates. In addition to fabrication complexity, nonuniform gratings, and multiple epitaxial growths that degrade the fabrication yield, these types of lasers possess relatively large footprint and complex control algorithms for wavelength tuning with multiple electrodes.…”

Section: Introductionmentioning

confidence: 99%

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

Wan

Zhang

Norman

et al. 2020

Laser & Photonics Reviews

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Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.

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Ring-Resonator Based Widely-Tunable Narrow-Linewidth Si/InP Integrated Lasers

Cited by 110 publications

References 51 publications

Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

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