RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon Gases

Hosokawa, Naokichi; Matsuzaki, Reisaku; Asamaki, Tatsuo

doi:10.7567/jjaps.2s1.435

Cited by 103 publications

(35 citation statements)

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“…It was clear from several studies of plasma-assisted etching in the mid-1970's [4][5][6] that energetic ion bombardment was a major factor in being able to etch anisotropically. However, there was little or no mechanistic understanding of this process at that time.…”

Section: The Role Of Energetic Ion Bombardmentmentioning

confidence: 99%

Surface-science aspects of plasma-assisted etching

Coburn

1994

Appl. Phys. A

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Section: The Role Of Energetic Ion Bombardmentmentioning

confidence: 99%

Surface-science aspects of plasma-assisted etching

Coburn

1994

Appl. Phys. A

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“…This technique is able to etch any kinds of substrates with standard photoresist. Later, fluorine and chlorine-containing gas etchants were introduced to RF sputter etching [49]. The compositions of gas etchants are CF 4 , CCl 2 F 2 , CCl 3 F, CHCl 2 F, CHClF 2 , (CCl 2 F) 2 , CCl 2 FCClF 2 and (CBrF 2 ) 2 .…”

Section: Plasma Etchingmentioning

confidence: 99%

Selection of micro-fabrication techniques on stainless steel sheet for skin friction

et al. 2016

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This review gives a concise introduction to the state-of-art techniques used for surface texturing, e.g., wet etching, plasma etching, laser surface texturing (LST), 3D printing, etc. In order to fabricate deterministic textures with the desired geometric structures and scales, the innovative texturing technologies are developed and extended. Such texturing technology is an emerging frontier with revolutionary impact in industrial and scientific fields. With the help of the latest fabrication technologies, surface textures are scaling down and more complex deterministic patterns may be fabricated with desired functions, e.g., lotus effect (hydrophobic), gecko feet (adhesive), haptic tactile, etc. The objective of this review is to explore the surface texturing technology and its contributions to the applications.

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“…Early plasma etch systems employed capacitively coupled barrel designs that operated at high pressure, which produced isotropic etching. Reactive ion plasma etching [26] was developed to enable improved control of feature size, dimensions and anisotropy of etch for SiO 2 [27] and Al [28]. Through the 1980s, plasma etch and reactive ion etching were developed to enable transfer of sub-micrometre features into the films on the silicon.…”

Section: (C) Etching Technologymentioning

confidence: 99%

Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

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RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon Gases

Cited by 103 publications

References 0 publications

Surface-science aspects of plasma-assisted etching

Surface-science aspects of plasma-assisted etching

Selection of micro-fabrication techniques on stainless steel sheet for skin friction

Lithography for enabling advances in integrated circuits and devices

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