RF small signal modeling of tri-gate Δ MOSFETs implemented on bulk Si wafers

A broadband small‐signal model extraction methodology over 0.2‐220 GHz for bulk FinFETs in RF CMOS technology

“…Finally, we focus on extraction of the small‐signal equivalent circuit. Many studies have proposed accurate modeling procedures for extracting equivalent circuits of microwave transistors . On the basis of these studies, we propose an innovative model extraction method and verify this method with measured data.…”

“…Therefore, most efforts in the literature have aimed to develop accurate and reliable models to support circuit design and to provide feedback for the fabrication process. Small‐signal models that can be used for FinFET modeling have been extensively reported but were either mainly verified below 110 GHz or verified primarily by data obtained by a 3‐D simulator . In 2017, Wu et al proposed a 220‐GHz compact equivalent circuit model (ECM); in 2015, Katayama et al proposed the successful modeling of common‐source metal‐oxide‐semiconductor field‐effect transistor (MOSFET) fabricated in a 65‐nm low‐power (LP) CMOS process up to 330 GHz .…”