RF-MEMS switch with through-silicon via by the molten solder ejection method

Ogawa, Shinpei; Soda, Shinnosuke; Lee, Sang-Seok; Izuo, Shinichi; Yoshida, Y.

doi:10.1016/j.sna.2012.04.023

Cited by 19 publications

(11 citation statements)

References 10 publications

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“…For simplicity, TSVs locate in the cap wafer [303]- [305], but it is also possible to be in the substrate [306]. For both cases, the TSVs are used for RF signal transmission through the hermetically-sealed substrate or cap.…”

Section: Rf Memsmentioning

confidence: 99%

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3-D Integration and Through-Silicon Vias in MEMS and Microsensors

Wang

2015

J. Microelectromech. Syst.

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After two decades of intensive development, 3-D integration has proven invaluable for allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink feature sizes. The 3-D integration is also an enabling technology for hetero-integration of microelectromechanical systems (MEMS)/microsensors with different technologies, such as CMOS and optoelectronics. This 3-D heterointegration allows for the development of highly integrated multifunctional microsystems with small footprints, low cost, and high performance demanded by emerging applications. This paper reviews the following aspects of the MEMS/ microsensor-centered 3-D integration: fabrication technologies and processes, processing considerations and strategies for 3-D integration, integrated device configurations and wafer-level packaging, and applications and commercial MEMS/ microsensor products using 3-D integration technologies. Of particular interest throughout this paper is the heterointegration of the MEMS and CMOS technologies. [2015-0158]Index Terms-Three-dimensional (3-D) integration, microelectromechanical systems (MEMS), microsensor, packaging, hetero-integration, interposer, through-silicon-via (TSV), waferlevel packaging, microsystem.

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Section: Rf Memsmentioning

confidence: 99%

“…The insertion loss of 2 mm CPW lines with TSVs is in the range of 0.14-0.3 dB over 5-25 GHz, with a 1dB cut-off frequency of 27.4 GHz. Instead of Cu plating, these TSVs are fabricated with Sn-Ag alloy using molten solder ejection, after fabrication of MEMS switches using surface micromachining technology [306].…”

Section: Rf Memsmentioning

confidence: 99%

3-D Integration and Through-Silicon Vias in MEMS and Microsensors

Wang

2015

J. Microelectromech. Syst.

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“…The pressure sensor die and the transceiver die are embedded with metal TSVs to match routing and interconnection layer [ 10 ]. MEMS resonator [ 11 ] and radio frequency (RF) MEMS switches [ 12 , 13 ] were fabricated combining wafer-level package and TSV connection. Griffin et al developed a thermoelastic ultrasonic actuator using integrated poly-Si TSVs [ 14 ].…”

Section: Introductionmentioning

confidence: 99%

A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Shao

Liu

Niu

et al. 2017

Sensors

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Reliability risks for two different types of through-silicon-vias (TSVs) are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranked for this TSV structure by FEA modeling. Parametric studies for material properties (modulus and thermal expansion) of TSV polymer are performed. The second type is a high aspect ratio TSV filled by polycrystalline silicon (poly Si). Potential risks of the voids in the poly Si due to filling defects are studied. Fracture mechanics methods are utilized to evaluate the risk for two different assembly conditions: package assembled to printed circuit board (PCB) and package assembled to flexible substrate. The effect of board/substrate/die thickness and the size and location of the void are discussed.

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“…By vertically integrating and stacking siliconbased devices such as RF-MEMS switches [4], MEMS antennas [5,6] and MEMS phase shifters [3], the size and cost of such radar systems are expected to decrease.…”

Section: Introductionmentioning

confidence: 99%

“…We previously proposed a molten solder ejection method (MSEM) for fabrication of TSVs and for hermetic packaging [20,21], and demonstrated an RF-MEMS switch that used low-loss TSVs and operated at 15 GHz [4]. In the MSEM, solder droplets of various diameters are ejected with a high positional accuracy from a specially designed ejection head.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

Ogawa

Yuasa

Fujii

et al. 2013

IEICE Electron. Express

Self Cite

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Abstract:We designed and fabricated a low-loss transmission line structure with through-silicon vias (TSVs) for use in the millimeterwave region for three-dimensional packaging of radio frequency microelectromechanical system devices. High-frequency simulations were used to determine the optimum transmission line structure. A transformer was employed to compensate for the impedance mismatch between the TSVs and the coplanar waveguide. The proposed structure was fabricated using a combination of surface micromachining and the molten solder ejection method. The electrical properties of the TSVs and the transmission line were measured, and a low insertion loss of 0.7 dB at 80 GHz was achieved.

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RF-MEMS switch with through-silicon via by the molten solder ejection method

Cited by 19 publications

References 10 publications

3-D Integration and Through-Silicon Vias in MEMS and Microsensors

3-D Integration and Through-Silicon Vias in MEMS and Microsensors

A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

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