A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Shao, Shuyan; Liu, Dapeng; Niu, Yuling; O’Donnell, Kathy; Sengupta, Dipak L.; Park, Seungbae

doi:10.3390/s17020322

Cited by 8 publications

(3 citation statements)

References 41 publications

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“…If the pre-pressure decreases to zero, the sensor is unable to measure the pressure of the shapemeter roll outer surface, and the shape signal will disappear. Hence, establishing a sensor reliability evaluation model, analyzing the sensitivity of sensor size parameters and designing a sensor via the robust design method are necessary [ 16 , 17 ].…”

Section: Application Backgroundmentioning

confidence: 99%

Reliability Evaluation and Robust Design of a Sensor in an Entire Roller-Embedded Shapemeter

Cui

Zhang

et al. 2018

Sensors

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The intermittence of the shape detection signal associated with an entire roller-embedded shapemeter roll, used in a seven-pass cold reversible rolling process, is considered. A transient interference at the sensor top surface and the distance between the sensor top surface and the roll outer surface are developed, and a sensor reliability evaluation model is derived. The reliability of the sensor is evaluated via the random perturbation method, and the reliability sensitivity of design variables is proposed. The analysis reveals that the reliability is smallest in the third rolling pass. Of the design variables considered, the initial interference exhibits the largest reliability sensitivity and has the greatest influence on the sensor reliability. A reliability robust design model of the initial interference is therefore developed. A new shapemeter roll is fabricated and tested in a 1050 reversible cold rolling mill. The test results are consistent with the theoretical results, thereby validating the proposed model. The selection of an appropriate initial interference provides an important means of overcoming the adverse effects associated with the thermal deformation of sensor contact surfaces.

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Section: Application Backgroundmentioning

confidence: 99%

Reliability Evaluation and Robust Design of a Sensor in an Entire Roller-Embedded Shapemeter

Cui

Zhang

et al. 2018

Sensors

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“…Banijamali et al (2011) used FEA to study the warpage and stress levels in TSV interposers and their interconnects. Shao et al (2017) used FEA to produce a parametric study on the effect of material properties variation such as the Young’s modulus and CTE mismatch on the generation of the thermo-mechanical stresses in the TSV structure. Nevertheless, an analysis of the factors that affect the thermo-mechanical reliability of TGVs is still lacking.…”

Section: Introductionmentioning

confidence: 99%

The effect of materials and design on the reliability of through-glass vias for 2.5 D integrated circuits: a numerical study

Ahmed

Okoro

Pollard

et al. 2020

MMMS

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PurposeThis study aims to investigate the factors responsible for substrate cracking reliability problem in through-glass vias (TGVs), which are critical components for glass-based 2.5 D integration.Design/methodology/approachNumerical models were used to examine the driving force for substrate cracking in glass interposers due to stress coupling during heating. An analytical solution was used to demonstrate how the energy release rate (ERR) for the glass substrate cracking is affected by the via design and the mismatch in thermal strain. Then, the numerical models were implemented to investigate the design factors effects, such as the pitch distance, via diameter, via pattern, via design, effect from a stress buffer layer and the interposer materials selection on the susceptibility to substrate cracking.FindingsERR for substrate cracking was found to be directly proportional to the via diameter and the thermal mismatch strain. When a via pattern is implemented for high-density integration, a coupling in the stress fields was identified. This coupling effect was found to depend on the pitch distance, the position of the vias, and the via arrangement, suggesting a via pattern-dependent reliability behavior for glass interposers. Changing the design of the via to an annular shape or a substrate-cored via was found to be a promising approach to reduce the susceptibility to substrate cracking compared to a fully filled solid via. Also, the use of a stress buffer layer, an encouraging design prospect presented for the first time for TGVs in this study, was found to significantly reduce cracking. Finally, alternative via and substrate materials showed lower tendency for substrate cracking, indicating that the reliability of glass interposers can be further enhanced with the implementation of such new materials.Originality/valueThis study signifies the first attempt to comprehensively evaluate the susceptibility to crack formation in glass interposers during heating. Therefore, this study provides new perspectives on how to achieve a significant potential reliability improvement for TGVs.

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“…These poly-Si metasurfaces were formed by conventional thermal annealing process at 950 °C for 5 h in order to reduce k by a factor of ten. However, high-temperature and long duration of thermal annealing may cause critical damages to underlying CMOS image sensor's circuits [10,11]. In this study, we focus on Si metasurfaces in the visible range (λ=450-650 nm) to make use of the highindex contrast and low light absorption on top of semiconductor circuits.…”

Section: Introductionmentioning

confidence: 99%

CMOS-compatible Si metasurface at visible wavelengths prepared by low-temperature green laser annealing

et al. 2018

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A low-temperature laser crystallization is newly devised for producing polycrystalline silicon (poly-Si) thin films of low-loss, low surface roughness enough for nanoscale patterning, applicable to practical Si metasurface elements on complementary metal-oxide semiconductor (CMOS) electronic architectures in visible lights. The method is based on dielectric encapsulation of an amorphous Si film and subsequent laser-induced local crystallization. Such poly-Si thin film yields order-of-magnitude smaller surface roughness and grain size than those obtained with the conventional laser annealing processes. The mechanism of the formation of small and uniform crystalline grains during solidification is studied to ensure the smooth surfaces enough for nanoscale patterning. By obtaining root mean square of surface roughness <2.49 nm and extinction coefficient <4.8×10 -2 at 550 nm, visible metasurface color-filter elements are experimentally demonstrated with the resonant transmission-peak efficiency approaching ∼85%. This low-loss poly-Si metasurface is favorably compatible with embedded CMOS electronic architectures in contrast to the conventional thermal annealing processes that often cause failure of electrical device functionalities due to delamination and material-property degradation problems. The proposed fabrication in this study provides a practical method for further development of various Si metasurfaces in the visible domain and their integration with CMOS electronic devices as well.

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A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Cited by 8 publications

References 41 publications

Reliability Evaluation and Robust Design of a Sensor in an Entire Roller-Embedded Shapemeter

Reliability Evaluation and Robust Design of a Sensor in an Entire Roller-Embedded Shapemeter

The effect of materials and design on the reliability of through-glass vias for 2.5 D integrated circuits: a numerical study

CMOS-compatible Si metasurface at visible wavelengths prepared by low-temperature green laser annealing

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