RF-MEMS based tri-band GaN power amplifier

Abstract

An RF-MEMs based tri-band GaN power amplifier with state-of-the-art performance is presented. The active device is a low-cost GaN-on-Si transistor with a plastic package. A dedicated broadband output matching network is designed to provide the desired waveform at the device intrinsic level. The frequency reconfigurability is implemented with one RF-MEMS at the input stage. Measured results show a 45, 28 and 46% power added efficiency (PAE) for an output power of 5.6, 3.0 and 4.5 W at 1.4, 2.5 and 3.6 GHz, respectively. Furthermore, the power amplifier exhibits a high drain efficiency of more than 46% across 1.3 -1.4 and 3.4 -3.7 GHz whilst delivering an output power of more than 4.3 W.

RF-MEMS multi-mode-matching networks for GaN power transistors

“…The authors of [7,8] present reconfigurable multifrequency gallium nitride (GaN) power amplifers (PAs) based on commercially available components. Both publications use RF-MEMS-switches as tuning devices, due to their "high linearity and low insertion loss [.…”

“…The authors of [7, 8] present reconfigurable multi-frequency gallium nitride (GaN) power amplifers (PAs) based on commercially available components. Both publications use RF-MEMS-switches as tuning devices, due to their “high linearity and low insertion loss […]” [8] and their high bias voltage “typically far beyond the power amplifier voltage swing” [7]. Liu et al [7] show a class-AB single-transistor PA with a broadband output-matching network and a 1-bit reconfigurable input stage optimized for efficiency.…”

“…Both publications use RF-MEMS-switches as tuning devices, due to their “high linearity and low insertion loss […]” [8] and their high bias voltage “typically far beyond the power amplifier voltage swing” [7]. Liu et al [7] show a class-AB single-transistor PA with a broadband output-matching network and a 1-bit reconfigurable input stage optimized for efficiency. The tri-band PA is designed for 1.4, 2.5 and 3.6 GHz.…”

A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit

“…RF-MEMS together with active circuitry (such as lownoise/power amplifiers) have with a few notable exceptions mainly been realised up to 5-10 GHz (see, e.g., [4][5][6][7][8][9][10][11][12][13][14]) which still leaves room for significant improvements to be made with respect to RF performance, frequency range, and functionality as well as to achieve reduced complexity and lower costs. Measured s-parameter data of a 26-30 GHz MEMS-switched transmit/receive circuit was reported in [5].…”