RF magnetron sputtering processed transparent conductive aluminum doped ZnO thin films with excellent optical and electrical properties

Zhao, Chunhu; Liu, Junfeng; Guo, Yixin; Pan, Yi-Hsuan; Weng, Guoen; Tao, Jiahua; Jiang, Ji-Sen; Chen, Shaoqiang; Yang, Pingxiong; Chu, Junhao

doi:10.1007/s10854-021-05578-2

Cited by 14 publications

(2 citation statements)

References 40 publications

(51 reference statements)

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“…In comparison to typical AZO films oriented along the 𝑐-axis of the (002) plane, RT-AZO films oriented along the 𝑎-axis are anticipated to exhibit a superior second harmonic conversion coefficient [22][23][24][25]. We achieved a transmittance of 95 % and a resistivity of ~4×10 −3 Ω•cm for RT-AZO without additional heat or laser treatment [26][27][28][29][30][31][32]. Our findings suggest that this deposition method has the potential for producing high-performance AZO films for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 94%

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Park,

Heo,

Lee

et al. 2023

Appl. Sci. Converg. Technol.

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Aluminum-doped zinc oxide (AZO) films are promising candidates for transparent electronics due to their low resistivity, high transmittance, and long-term stability. In this study, we investigated the impact of sputtering pressure on resistivity saturation in AZO films that are deposited by using radio frequency magnetron sputtering on transparent glass at room-temperature (RT). An X-ray diffraction analysis reveals that RTdeposited AZO (RT-AZO) films prepared at a pressure of 20 Pa exhibit a predominant orientation along the 𝑎-axis, favoring the (100) direction, as well as the lowest resistivity value of ∼ 4 × 10 −3 Ω⋅cm and the highest transmittance (95 %) in the visible range. These findings highlight the potential of our deposition approach for producing highly oriented (100) RT-AZO films, paving the way for their application to low-cost transparent electronics.

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Section: Introductionmentioning

confidence: 94%

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Park,

Heo,

Lee

et al. 2023

Appl. Sci. Converg. Technol.

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“…For example, Gao et al [15] attributed this to a more uniform grain distribution with good crystalline quality, which in turn leads to higher carrier mobility and hence higher conductivity. There are already works [16,17], where the optical and electrical properties of AZO films synthesized at various RF sputtering powers have been However, the influence of the thickness of AZO thin films has been put on the background, although it is known [18] thickness has a key effect on electrical resistivity. The point is that the AZO layers at the film-substrate interface have a strongly disordered structure, which adversely affects the electrical characteristics.…”

Section: Introductionmentioning

confidence: 99%

Influence of the RF magnetron sputtering power on the optical and electrical properties of AZO films

Kh Nussupov

2023

phst

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Thin AZO films were synthesized using radio frequency magnetron sputtering method on the surface of polished silicon samples and glass slides. The sputtering power was varied in the range of 150-300 W with the step of 25W; deposition time was adjusted so that the film thickness remained equal to 70 nm. The rest of the deposition parameters: working pressure, temperature, and the substrate rotation rate, remained unchanged. The thickness and deposition rate of thin films were measured using X-ray reflectometry. The electrical properties (resistivity, Hall mobility and charge concentration) of thin films were measured by the Van Der Pauw method using the Hall effect. The transmission spectra of the films were measured in the wavelength range from 300 to 1100 nm. The average crystallite size was determined using X-ray diffraction spectra and the Scherrer equation. As a result, it was shown that AZO films synthesized at a power of 300 W have the best electrical and optical properties. At this power, the lowest resistivity value of 2.83×10 -3 Ω•cm and the maximum charge mobility of 9.6 cm 2 V -1 sec -1 were achieved for films of the same thickness 70 nm. The decrease in the electrical resistivity of the films with increasing power is explained by more intense heating of the substrate during deposition, which leads to an improvement in the crystallinity of the film, and, as a consequence, to an increase in the mobility of charge carriers.

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Effect of rapid thermal annealing time on ZnO:F thin films deposited by radio frequency magnetron sputtering for solar cell applications

et al. 2022

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RF magnetron sputtering processed transparent conductive aluminum doped ZnO thin films with excellent optical and electrical properties

Cited by 14 publications

References 40 publications

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

Influence of the RF magnetron sputtering power on the optical and electrical properties of AZO films

Effect of rapid thermal annealing time on ZnO:F thin films deposited by radio frequency magnetron sputtering for solar cell applications

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