RF magnetron sputtered NiO<sub><italic>x</italic></sub> and NiO<sub><italic>x</italic></sub>/c-Si single-side heterojunction solar cells

A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells

“…Moreover, there are less and easier preparation processes than other corresponding technology like PERC(Passivated Emitter and Rear Cell) and TOPCon(Tunnel Oxide Passivating Contacts). 2 However, the band gap of a-Si is 1.7 eV 3 , which causes severe parasitic absorption, limiting the enhancement of short-circuit current density (J sc ) and open circuit voltage (V oc ). Therefore, in order to further improve the PCE of HJT solar cells, it is of great significance to find a suitable wide-bandgap material to replace a-Si as the emitter.…”