RF Linearity Performance Potential of Short-Channel Graphene Field-Effect Transistors

“…The convergence of some simulation techniques such as harmonic-balance and transient analysis, requires continuous first and second-order derivatives [23]. Consequently, the model should have continuous high-order derivatives.…”

Section: Transconductancementioning

confidence: 99%

Modeling and Performance Evaluation of a Top Gated Graphene MOSFET

Sarker¹,

Shifat²,

Shuvro³

2017

Adv. sci. technol. eng. syst. j.

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“…Graphene has the potential to offer third-order linearity, at least, comparable to carbon nanotube-based field-effect transistors (CNFETs) and metal-oxide semiconductor field-effect transistors (MOSFETs), but it, unfortunately, suffers from worse second-order linearity. In addition, its load-resistance dependency is intimately tied to the lack of a band gap and linear density of states (DOS) of graphene [51]. Strategies such as increasing the graphene quality lead to increasing mobility, reduce contact resistance, and a good electrostatic control of the channel, and therefore, its drain-source current (I DS ) and transconductance (g m ) of the field-effect transistor [52].…”

Section: Applications In Analogue Radiofrequency (Rf) Devices and Intmentioning

confidence: 99%

State-of-the-Art Electronic Devices Based on Graphene

Vargas-Bernal¹

2016

Nanoelectronics and Materials Development

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Graphene can be considered as the material used for electronic devices of this century, due to its excellent physical and chemical properties, which have been studied and implemented from a theoretical basis and have allowed the development of unique and innovative applications. The need for an ongoing study of the state-of-the-art electronic devices is ultimately useful for the progress achieved so far and future project applications. To date, graphene has been used individually in composite, hybrid materials or functional materials. In this chapter, an overview of their applications in nanoelectronics, particularly with an emphasis directed to flexible electronics, is presented. The description of the advantages and properties of graphene at a level of materials science and engineering is presented, in order to spread its enormous potential. In addition, the future prospects of these applications arising from the developments made currently in the laboratory phase are examined.

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“…Though the non‐linearity effects of GFETs have been reported by several researches [6–9], however, these reports are on zero bandgap graphene. In [6], K. A. Jenkins et al.…”

Section: Introductionmentioning

confidence: 99%

Memoryless non‐linearity in B‐Substitution doped and undoped graphene FETs: A comparative investigation

Chandrasekar

Pradhan

2021

IET Circuits, Devices & Systems

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An accurate electrical equivalent circuit model for boron-substitution doped graphene field effect transistor (GFET) is proposed to analyse the effects of memoryless nonlinearity on transconductance. The proposed equivalent circuit model is verified with the simulated results of an industry-standard circuit simulation tool. The fundamental figures of merit (FOMs), such as the second-and third-order harmonic distortion terms (HD 2 and HD 3), gain compression point (A in,1dB), second-and third-order intermodulation distortion terms (IM 2 and IM 3), and second-and third-order input intercept points (A IIP2 and A IIP3) are mathematically modelled for B-substitution doped GFET to examine the linear behaviour of the device. The expressions are validated by performing the single tone and double tone simulation test to the proposed equivalent circuit model using the industry-standard circuit simulator. The proposed model is compatible and predicts accurate results for both B-substitution doped and undoped GFET. The simulation results are having an excellent agreement with the mathematical model, which are also compared with the undoped GFET and conventional MOSFET. It is also observed that by Bsubstitution doping the graphene sheet significantly induces the bandgapt and hence enhances the linear behaviour of the B-substitution doped GFET and promises highly desirable linearity requirement in the analog/RF applications. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.

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RF Linearity Performance Potential of Short-Channel Graphene Field-Effect Transistors

Cited by 12 publications

References 40 publications

Modeling and Performance Evaluation of a Top Gated Graphene MOSFET

Modeling and Performance Evaluation of a Top Gated Graphene MOSFET

State-of-the-Art Electronic Devices Based on Graphene

Memoryless non‐linearity in B‐Substitution doped and undoped graphene FETs: A comparative investigation

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