RF-Input Load Modulated Balanced Amplifier With Octave Bandwidth

Pednekar, Prathamesh H.; Berry, Eric; Barton, Taylor W.

doi:10.1109/tmtt.2017.2748123

Cited by 99 publications

(45 citation statements)

References 23 publications

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“…The corresponding phase variations of OMN 1 and OMN 2 versus the normalized frequencies are shown in Fig. 4 14, (16), (20) and 21, we can see that the bandwidth of Mode I becomes narrower and be concentrated around f c . When β is smaller than a certain α, the bandwidth of Mode II will disappear.…”

Section: B Bandwidth Analysismentioning

confidence: 90%

“…Re(Y bo ) ≥ 10 −δ/10 γR opt (19) The required back-off impedances of the proposed DPA are expressed by phases θ M 1 and θ M 2 and Z T of OMNs in (14) and (16). Thus, to define the bandwidth of the proposed DPA, it is crucial to discuss the impact of θ M 1 and θ M 2 .…”

Section: B Bandwidth Analysismentioning

confidence: 99%

“…where f refers to the operation frequency, which is normalized to the center frequency f c , θ 1 and θ 2 is the reference phase at f c and α and β is the changing factor of the phase change with the operation frequency of OMN 1 and OMN 2, respectively. From (14), (16), (20) and (21), we can see that Z M 1,bo and Z M 2,bo can be expressed by using α, β, θ 1 , θ 2 and f . If these parameters are substituted into (18) and (19), the resistances of Z M 1,bo and Z M 2,bo are now restricted to the condition (18) and the conductances of Y M 1,bo and Y M 2,bo are restricted to the condition (19).…”

Section: B Bandwidth Analysismentioning

confidence: 99%

“…The over-driven level of the proposed DPA at back-off can be defined as BO p − BO γ . From (14), (16) and (17), the over-driven level can be easily calculated. By employing the over-driven current waveform introduced in [25], [26], we can obtain the back-off efficiency performance of the proposed DPA.…”

Section: Back-off Efficiency Performancementioning

confidence: 99%

“…The bandwidth expansion of DPAs at architecture level has also been explored, such as dual input [2], [3] or bias adaptation [15]. Other techniques for improving average efficiency such as load modulated balanced PAs [16] and Doherty-like multi-transistors combing PAs [17] also extend the bandwidth to higher than 3 GHz to meet the requirements for the 5G systems. Nevertheless, the bandwidths of DPAs are still limited and it is very challenging to design a high efficiency Doherty PA to cover the full bandwidth of 5G, e.g., from 2 to 5 or 6 GHz.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

Pang

et al. 2019

IEEE Trans. Microwave Theory Techn.

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A novel architecture to extend the bandwidth of the Doherty power amplifier (DPA) is presented in this paper. It is illustrated that two DPA modes at different frequency bands can be realized by simply swapping the gate biases of the transistors without changing the matching circuits, and hence ultra wide bandwidth can be achieved by using a single load modulation network in DPA. A dual-mode DPA with 2.8-4.1 GHz bandwidth for Mode I and 2.2-2.7/4.2-4.8 GHz bandwidth for Mode II using commercial GaN transistors is designed and implemented to validate the proposed architecture. The fabricated DPA attains a measured 7.5-11.7 dB gain and 39.2-41 dBm saturated power. 35.0% to 49.7% drain efficiency is obtained at 6 dB output power back-off for the designed dual-mode bands. When driven by a 10-carrier 200 MHz OFDM signal with 7.7 dB peak to average power ratio, the proposed DPA achieves adjacent channel leakage ratio of better than-50 dBc after digital predistortion at 2.5/3.5/4.5 GHz with average efficiency of 46.0/35.7/33.0%. This simple configuration provides a promising solution for 5G, where multiple frequency bands in sub-6 GHz will be deployed.

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Section: B Bandwidth Analysismentioning

confidence: 90%

Section: B Bandwidth Analysismentioning

confidence: 99%

Section: B Bandwidth Analysismentioning

confidence: 99%

Section: Back-off Efficiency Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

Pang

et al. 2019

IEEE Trans. Microwave Theory Techn.

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Design of a mixed load‐modulation balanced power amplifier with ultra‐extended power back‐off range

Zhang,

Xuan

2024

Circuit Theory & Apps

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SummaryThis paper proposes a mixed design strategy to expand the power back‐off (OBO) range of the pseudo‐Doherty load‐modulation balanced power amplifier (LMBA). An asymmetric LMBA configuration is employed to increase the OBO range. The two PA branches of the balanced PA operate in different class‐C modes, thereby obtaining two OBO points. Further, an asymmetrical coupler is also introduced into the asymmetrical LMBA architecture to expand the OBO. Here, the relationship between the OBO and coupler's parameters and asymmetrical configuration parameters is built. The behaviors of the proposed PA as a function of input power are derived when several representative parameters are chosen. To validate the proposed topology, a PA with an OBO of 15 dB operating across 3.4–3.6 GHz is designed, fabricated, and tested. Measurements illustrate that the PA can deliver a saturated output power of 43.6–44.5 dBm with a drain efficiency ranging from 70% to 72%. Drain efficiencies are between 50% and 68% at the OBO of 15 dB. The LMBA implemented here shows state‐of‐the‐art performance in terms of the OBO range.

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Analysis of the impact of prototyping‐related parasitic effects in a hybrid GaN power amplifier for 5G FR1 applications

Bartolotti,

Zhang,

Shi

et al. 2023

Int J Numerical Modelling

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This article analyses the impact of parasitic effects encountered in the manufacturing of a Gallium Nitride power amplifier optimized for a specific trade‐off of efficiency and linearity at 5G FR1 frequencies. The analysis focuses on an example based on a packaged transistor and implemented in hybrid technology, adopting a two‐layer printed circuit board for passive distributed elements and surface‐mount lumped components. The design is summarized, and the focus is then posed on the comparison of simulated and measured results, the main causes of inaccuracy in their agreement, and a simple way of reproducing these in simulation. The mechanical stability of the assembly and the sensitivity of the second harmonic control are identified as the main sources of performance degradation. These effects are correctly modeled at the simulation level thanks to the insertion of specific parasitic lumped elements but could not be fully eliminated at the experimental level in this specific prototype. However, post‐tuning performed on the prototype, guided by the proposed analysis, still allows to reach satisfactory performance although somewhat sub‐optimal compared to the one expected from simulations. At 3.5 GHz, the re‐tuned PA demonstrates a measured output power in excess of 37.5 dBm at saturation, with associated gain higher than 14 dB and PAE of 60%. In a 2‐tone test with 20 MHz spacing, the IMD3 remains lower than −30 dBc up to 29 dBm of output power with a corresponding PAE of the order of 32%.

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RF-Input Load Modulated Balanced Amplifier With Octave Bandwidth

Cited by 99 publications

References 23 publications

Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

Design of a mixed load‐modulation balanced power amplifier with ultra‐extended power back‐off range

Analysis of the impact of prototyping‐related parasitic effects in a hybrid GaN power amplifier for 5G FR1 applications

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