RF HCI testing methodology and lifetime model establishment

Ng, Wee Loon; Toledo, Nikholas G.

doi:10.1109/relphy.2004.1315361

Cited by 7 publications

(1 citation statement)

References 4 publications

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“…Furthermore, in order to analyze and predict the performance of devices easily and accurately, we need to establish hot-carrier degradation model. Most of the hot-carrier degradation models proposed previously are physical models or formula models [14]- [19]. Physical models need to take complex microscopic mechanisms into account.…”

Section: Introductionmentioning

confidence: 99%

Analysis and modeling for MOSFET degradation under RF stress

Yang

Niu

et al. 2021

IEICE Electron. Express

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The degradation of NMOSFETs due to hot-carrier effects under DC and RF stress was studied experimentally. The experimental results indicate that DC stress leads to more serious performance degradation than RF stress. It has also been found that channel length and width can change the worst DC stress condition. Moreover, RF performance degradation can be explained by DC performance degradation. A new model is proposed to predict the degradation characteristics of devices under RF stress by the degradation under DC stress. By using knowledge-based neural network (KBNN), the model shows good accuracy. It can also reduce test data set and simplify testing process.

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Section: Introductionmentioning

confidence: 99%