RF Diamond Transistors: Current Status and Future Prospects

Umezawa, Hamao; Hirama, Kazuyuki; Arai, Tatsuya; Hata, Hideo; Takayanagi, H.; Koshiba, T.; Yohara, K.; Mejima, Soichi; Satoh, Mitsuya; Song, K. S.; Kawarada, Hiroshi

doi:10.1143/jjap.44.7789

Cited by 21 publications

(4 citation statements)

References 26 publications

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“…Diamond semiconductor has a strong potential for use in the field of high-power electronics because its breakdown electric field and thermal conductivity are higher than those of Si, SiC and GaN. Consequently, diamond-based transistors such as metal-semiconductor field-effect transistors (MESFETs), junction field-effect transistors (JFETs), hydrogen-terminated diamond MOSFETs (H-diamond FETs) and pnp bipolar junction transistors (pnp BJTs) have been developed 9 10 11 12 13 14 15 16 17 18 19 20 . However, diamond MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels have not yet been developed.…”

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confidence: 99%

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Matsumoto

Kato

Oyama

et al. 2016

Sci Rep

162

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We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature.

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confidence: 99%

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Matsumoto

Kato

Oyama

et al. 2016

Sci Rep

162

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“…This drain current is comparable to that of a C-H MOSFET with the same SD length L SD during normallyon operation. In general, normally-off diamond FETs show a much lower I D , particularly for the C-O channels [30,91,92]. When using the C-Si channels, the density of states in the pinned state can be as low as that at the C-H surface.…”

Section: Mobility Enhancementmentioning

confidence: 99%

Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits

Kawarada¹

2022

J. Phys. D: Appl. Phys.

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Diamond is a wide bandgap semiconductor (bandgap 5.5 eV). However, due to impurity doping, it becomes a p-type or n-type semiconductor. The minimum resistivity of the p-type semiconductor is less than 10-3 Ωcm, which is equivalent to that of silicon (Si). When the diamond surface is terminated with hydrogen (H) or Si atoms, the subsurface becomes a p-type accumulation layer or inversion layer, forming a two-dimensional Hall gas (2DHG) that can be used as a channel for field effect transistors (FETs). As a p-channel FET (p-FET), its performance is now approaching that of other wide bandgap semiconductor n-channel FETs. This review describes the metal contact and 2DHG formation on the H-terminated diamond surface from a surface dipole perspective. Recent advances in 2DHG FETs have been discussed, especially in current densities of > 1A / mm and high frequency performance. Finally, we propose two types of complementary high-voltage circuits that combine diamond p-FETs and other wide bandgap semiconductor n-FETs.

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“…Diamond is considered as an ultimate material for powerelectronics applications owing to its superior physical properties, such as a wide bandgap (5.5 eV), high breakdown electric field (> 10 MV/cm), high carrier mobility (7300 and 5300 cm 2 V −1 s −1 for electron and hole, respectively), and high thermal conductivity (2200 Wm −1 K −1 ) [1][2][3][4][5]. Therefore, diamond-based devices are promising for power applications and have been receiving more and more attention in recent years [6][7][8][9][10][11][12][13]. Among diamond power devices, the diamond metal-oxide-semiconductor field-effect transistor (MOSFET), a kind of popular power switching device, has been intensively investigated worldwide.…”

Section: Introductionmentioning

confidence: 99%

Inversion-type p-channel diamond MOSFET issues

Zhang

Matsumoto

Yamasaki

et al. 2021

Journal of Materials Research

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This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration (NP) of the n-type body on field-effect mobility (μFE) and interface state density (Dit) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low μFE and one main reason is high Dit. To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low C–V method and the conductance method, providing further insights into the trap properties at Al2O3/diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs. Graphic abstract

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RF Diamond Transistors: Current Status and Future Prospects

Cited by 21 publications

References 26 publications

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits

Inversion-type p-channel diamond MOSFET issues

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