RF Characterization of Schottky Diodes in 65-nm CMOS

Matters-Kammerer, Marion K.; Tripodi, L.; Langevelde, R. van; Cumana, Jesus; Jansen, R.H.

doi:10.1109/ted.2010.2043402

Cited by 24 publications

(12 citation statements)

References 11 publications

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“…where C T is the diode's total capacitance and R S is the series resistance [35], [36]. While in [36] only the junction capacitance is considered due to the devices being measured on-wafer, when the diodes are packaged the total (junc-tion+packaging) capacitance needs to be considered.…”

Section: A Diode Selection and Modelingmentioning

confidence: 99%

Broadband Millimeter-Wave Textile-Based Flexible Rectenna for Wearable Energy Harvesting

Wagih

Hilton

Weddell

et al. 2020

IEEE Trans. Microwave Theory Techn.

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Millimeter-Wave (mmWave) bands, a key part of future 5G networks, represent a potential channel for RF energy harvesting, where the high-gain antenna arrays offer improved end-to-end efficiency compared to sub-6 GHz networks. This paper presents a broadband mmWave rectenna, the first rectenna realized on a flexible textile substrate for wearable applications. The proposed novel antenna's bandwidth extends from 23 to 40 GHz, with a minimum radiation efficiency of 67% up to 30 GHz, over 3 dB improvement compared to a standard patch. A stable gain of more than 8 dB is achieved based on a textile reflector plane. The antenna is directly connected to a textilebased microstrip voltage doubler rectifier utilizing commercial Schottky diodes. The rectifier is matched to the antenna using a tapered line feed for high-impedance matching, achieving broadband high voltage-sensitivity. The rectifier has a peak RF-DC efficiency of 12% and a 9.5 dBm 1 V sensitivity from 23 to 24.25 GHz. The integrated rectenna is demonstrated with more than 1.3-V DC output from 12 dBm of mmWave wireless power across a 28% fractional bandwidth from 20 to 26.5 GHz, a 15% half-power fractional bandwidth, and a peak output of 6.5V from 20 dBm at 24 GHz.

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Section: A Diode Selection and Modelingmentioning

confidence: 99%

Broadband Millimeter-Wave Textile-Based Flexible Rectenna for Wearable Energy Harvesting

Wagih

Hilton

Weddell

et al. 2020

IEEE Trans. Microwave Theory Techn.

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“…Therefore, several researches for various shapes of junction have been conducted. With the same total anode junction size, a single square junction SBD and an array of 8 × 8 minimum‐sized parallel junction SBD has been compared, as shown in Figure (a) . In this study, f T of the array‐junction SBD is higher than that of the single square junction SBD, because the parallel connection of the array decreases R s while C j0 maintain its current value.…”

Section: Introductionmentioning

confidence: 99%

“…Parameters change of anode for (a) large total size and (b) small total size. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com]…”

Section: Introductionmentioning

confidence: 99%

STI edge effect on the series resistance of CMOS Schottky barrier diodes

Lee

Kim

Hong

et al. 2014

Microw. Opt. Technol. Lett.

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An analysis of the shallow trench isolation (STI) edge effect on CMOS Schottky barrier diode (SBD) is reported in this article. The STI edge effect, which includes the impact of the fringing electric field and the nonplanar intersection of STI, significantly distorts the performance of SBDs with a small junction. Due to this effect, when an array SBD is formed by connecting several SBDs with a small junction in parallel, the series resistance of the array SBD is not reduced as expected. Therefore, the cut‐off frequency of an array SBD with a small unit junction SBD degenerates quickly. This phenomenon is observed in measurements of fabricated CMOS SBD prototypes. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:932–935, 2014

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“…In the current study, we propose a micrometer‐size G/Si heterojunction Schottky diode that monitors its exposure to different vapors (chloroform, methanol, and phenol). Heterojunction Schottky diode as a metal‐semiconductor device is an electronics component which is widely used in several applications, such as radio frequency, millimeter‐wave receiver, solar cells and photo‐detection . Its main advantages are the low turn on voltage, fast recovery time and low junction capacitance.…”

Section: Introductionmentioning

confidence: 99%

Graphene/Silicon Heterojunction Schottky Diode for Vapors Sensing Using Impedance Spectroscopy

Fattah

Khatami

Mayorga‐Martinez

et al. 2014

Small

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A graphene(G)/Silicon(Si) heterojunction Schottky diode and a simple method that evaluates its electrical response to different chemical vapors using electrochemical impedance spectroscopy (EIS) are implemented. To study the impedance response of the device of a given vapor, relative impedance change (RIC) as a function of the frequency is evaluated. The minimum value of RIC for different vapors corresponds to different frequency values (18.7, 12.9 and 10.7 KHz for chloroform, phenol, and methanol vapors respectively). The impedance responses to phenol, beside other gases used as model analytes for different vapor concentrations are studied. The equivalent circuit of the device is obtained and simplified, using data fitting from the extracted values of resistances and capacitances. The resistance corresponding to interphase G/Si is used as a parameter to compare the performance of this device upon different phenol concentrations and a high reproducibility with a 4.4% relative standard deviation is obtained. The efficiency of the device fabrication, its selectivity, reproducibility and easy measurement mode using EIS makes the developed system an interesting alternative for gases detection for environmental monitoring and other industrial applications.

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RF Characterization of Schottky Diodes in 65-nm CMOS

Cited by 24 publications

References 11 publications

Broadband Millimeter-Wave Textile-Based Flexible Rectenna for Wearable Energy Harvesting

Broadband Millimeter-Wave Textile-Based Flexible Rectenna for Wearable Energy Harvesting

STI edge effect on the series resistance of CMOS Schottky barrier diodes

Graphene/Silicon Heterojunction Schottky Diode for Vapors Sensing Using Impedance Spectroscopy

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