RF acoustic microsystems based on suspended lithium niobate thin films: advances and outlook

Lu, Ruochen; Gong, Songbin

doi:10.1088/1361-6439/ac288f

Cited by 64 publications

(18 citation statements)

References 129 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Piezoelectrically transduced microscale resonant devices have broad applications such as inertial sensing, [ 33–36 ] radio frequency (RF) signal processing, [ 37–43 ] and environmental monitoring. [ 44,45 ] Within these fields, microscale piezoelectric resonators are widely used in various applications like frequency filtering, sensing, and clock generation.…”

Section: Introductionmentioning

confidence: 99%

“…[30][31][32] The fabrication processes for many piezoelectric thin films allow them to be integrated into complementary metal oxide semiconductor (CMOS) circuitry to deliver a fully integrated solution. [19] Piezoelectrically transduced microscale resonant devices have broad applications such as inertial sensing, [33][34][35][36] radio frequency (RF) signal processing, [37][38][39][40][41][42][43] and environmental monitoring. [44,45] Within these fields, microscale piezoelectric resonators are widely used in various applications like frequency filtering, sensing, and clock generation.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Lynes

Chandrahalim

2023

Adv Materials Inter

View full text Add to dashboard Cite

Piezoelectric microelectromechanical systems (MEMS) are used as sensors, actuators, energy harvesters, accelerometers, and communication modules. Aluminum nitride (AlN) is an especially attractive piezoelectric material because its fabrication process allows it to be integrated into semiconductor circuitry to deliver a fully integrated solution. Microelectromechanical resonators with AlN sandwiched between n‐type silicon (Si) and top metal electrode with and without a silicon oxide layer are designed and fabricated. The effect of the oxide film is up to a fourfold increase in quality factor (Q) that is consistent from very high frequency (VHF) to super high frequency (SHF). This effect is demonstrated using thin plate bulk acoustic wave modes from 70–80 MHz using the second contour mode and first width extensional mode and from 9.5–10.5 GHz using high overtone thickness modes. To explore potential applications of AlN‐transduced Q‐enhanced MEMS devices in harsh environments, measurements from −200 °C to +200 °C are performed. The Q enhancement is persistent across a wide temperature range for both VHF and SHF resonators with the added oxide layer. Furthermore, AlN‐on‐Si resonators that have a comparable temperature coefficient of frequency to silicon carbide‐based resonators in commercial applications are demonstrated.

show abstract

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Lynes

Chandrahalim

2023

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…Microelectromechanical systems (MEMS) acoustic resonators have many uses, from radio frequency (RF) resonators, filters, and electronic oscillators [1][2][3][4][5][6][7][8] to inertial sensing [9][10][11] and environmental monitoring. [12,13] The large variety of device designs facilitates using MEMS resonators in applications such as energy harvesting, [14][15][16] signal processing, [17][18][19] health, [20,21] robotics, [22,23] defense, [22,24] and aerospace.…”

Section: Introductionmentioning

confidence: 99%

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Lynes,

Young,

Lang

et al. 2023

Adv Materials Inter

View full text Add to dashboard Cite

Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro‐robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is unveiled. Aluminum nitride on silicon (AlN‐on‐Si) and AlN‐SiO2‐Si bulk acoustic wave (BAW) resonators are designed and fabricated. The devices are irradiated using 2 MeV Si+ ions at various fluxes up to a total fluence of 5 × 1014 cm−2. A time anneal is conducted to characterize device recovery. Scattering (S‐) parameters are measured in situ. Specific damage coefficients are derived to describe the radiation effect on resonant frequency (fr), quality factor (Q), motional resistance (Rm), and electromechanical coupling factor (). Furthermore, the damage coefficients for the bulk material properties of elastic modulus (E) and the piezoelectric coefficient (d31) are found.

show abstract

“…utilizing piezoelectric transduction, known as piezo-MEMS resonators, find extensive utility in inertial sensing, radio frequency (RF) signal processing, and environmental monitoring applications. [35][36][37][38][39][40][41][42][43][44][45][46][47] They serve as filters, sensors, and clock generators, [48] offering high selectivity, narrow bandwidth, and good stability. [34] These characteristics, along with their ongoing miniaturization, affordability, and compatibility with CMOS technology, position piezo-MEMS resonators as excellent choices for deployment in microsatellites and radiation monitoring systems.…”

mentioning

confidence: 99%

Effects of Gamma Ray Radiation on the Performance of Microelectromechanical Resonators

et al. 2023

View full text Add to dashboard Cite

While much radiation test data are available for metal‐oxide‐semiconductor (MOS) devices, research into the effects of radiation on microelectromechanical systems (MEMS) is in its relative infancy. Piezoelectrically transduced MEMS resonators have broad applications in signal processing, environmental monitoring, and navigation. Aluminum nitride (AlN), in particular, is an attractive piezoelectric because of its favorable fabrication characteristics and ease of integration into the complementary MOS (CMOS) manufacturing process. The utility of these devices in space and nuclear systems necessitates research into their performance in radiation environments. Resiliency and an established relationship between radiation dose and device behavior provide a critical tool for engineers in their design process. Multiple AlN‐based MEMS resonator designs are created and exposed the devices to 1 Mrad(Si) gamma irradiation from a Cobalt‐60 source while measuring scattering (S‐) parameters in situ. The experimental data are matched to a theoretical model to describe the change in frequency as a function of radiation‐induced displacement damage. It is demonstrated that the AlN‐based resonators are resilient against radiation‐induced charge‐trapping effects. Furthermore, a new method is presented of permanent frequency trimming MEMS resonators up to 30% of their bandwidth without modifying quality factor or motional resistance.

show abstract

RF acoustic microsystems based on suspended lithium niobate thin films: advances and outlook

Cited by 64 publications

References 129 publications

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Effects of Gamma Ray Radiation on the Performance of Microelectromechanical Resonators

Contact Info

Product

Resources

About