Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices

Cho, Byungjin; Kim, Tae-Wook; Song, Sunghoon; Ji, Yongsung; Jo, Minseok; Hwang, Hyunsang; Jung, Gun‐Young; Lee, Takhee

doi:10.1002/adma.200903203

Cited by 179 publications

(159 citation statements)

References 33 publications

Supporting

Mentioning

150

Contrasting

Unclassified

Order By: Relevance

“…This limits its application because rewritability is essential for most data storage applications. Recently, Cho et al [73] solved this problem by introducing a unipolar-type memory element, because the 1D1R device with bipolar memory cannot operate properly since it is not erasable because of the suppressed current at the reverse polarity. They constructed array-type 1D-1R memory devices combining an inorganic Schottky diode and organic unipolar memory (as shown in Figure 8), which presented good retention characteristics (10 4 s) with extrapolated retention times of more than 1 year and endurance cycling of more than 280 times.…”

Section: Integration Of Two-terminal Organic Memory Devicesmentioning

confidence: 99%

Advancements in organic nonvolatile memory devices

Liu

et al. 2011

Chin. Sci. Bull.

View full text Add to dashboard Cite

Section: Integration Of Two-terminal Organic Memory Devicesmentioning

confidence: 99%

Advancements in organic nonvolatile memory devices

Liu

et al. 2011

Chin. Sci. Bull.

View full text Add to dashboard Cite

“…The resulting bistable current-voltage (I-V) characteristics can be applied as a nonvolatile memory. A surprisingly large variety of materials and material combinations can give rise to resistive switching [2][3][4][5][6][7][8][9], which indicates that the mechanism of the resistive switching may be very general.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching in Metal Oxide/Organic Semiconductor Nonvolatile Memories

Gomes¹,

Leeuw²,

Meskers³

2018

Memristor and Memristive Neural Networks

View full text Add to dashboard Cite

Diodes incorporating a bilayer of a metal oxide and an organic semiconductor can show unipolar, nonvolatile memory behavior after electroforming. Electroforming involves dielectric breakdown induced by prolonged bias voltage stress. When the power dissipated during breakdown is limited, electroforming is reversible and involves formation of defects at the organic-oxide interface that can heal spontaneously. When the power dissipation during breakdown exceeds a certain threshold, electroforming becomes irreversible. The fully electroformed diodes show electrical bistability, featuring (meta) stable states with low and high conduction that can be programmed by voltage pulses. The high conduction results from current flowing via filamentary paths. The bistability is explained by the coexistence of two thermodynamically stable phases at the interface between semiconductor and oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with low work function give rise to current filaments. In the filaments, Joule heating will raise temperature locally. When the temperature exceeds the critical temperature, the filament will switch off. The switching involves a collective recombination of charge carriers trapped at the defects as evidenced by bursts of electroluminescence.

show abstract

“…This selector device can be an (organic) rectifier for ORS. [37][38][39] The appealing point on the approach presented here is that the OLED can possibly be used as a rectifying element, similar to that presented in Ref. 13 as it also exhibits a strong nonlinearity in its IV characteristics.…”

mentioning

confidence: 99%

Monolithically integrated organic resistive switches for luminance and emission color manipulation in polymer light emitting diodes

Nau

Sørdal

Wolf

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

The rising significance of organic light emitting diodes as lighting devices puts their peripheral devices into focus as well. Here, we present an organic optoelectronic device allowing for multistable luminance and emission color control. The introduced device is monolithically built up from organic resistive switching elements processed directly on top of a polymer light emitting diode (PLED). This realization, representing a serial connection, allows for precise control of the voltage drop across and thus the current density through the PLED resulting in a control of its luminance. Additionally, by using a fluorescence-phosphoresence host-guest blend as the light emitting layer, it is possible to tune the emission color in the same way. Specifically, focus was set on color temperature tuning in a white light emitting diode. Notable, for all different luminance and color states, the driving voltage is constant, enabling, e.g., a conventional battery as power supply.

show abstract

Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices

Cited by 179 publications

References 33 publications

Advancements in organic nonvolatile memory devices

Advancements in organic nonvolatile memory devices

Resistive Switching in Metal Oxide/Organic Semiconductor Nonvolatile Memories

Monolithically integrated organic resistive switches for luminance and emission color manipulation in polymer light emitting diodes

Contact Info

Product

Resources

About