2021
DOI: 10.1063/5.0047637
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Revisiting doping mechanisms of n-type organic materials with N-DMBI for thermoelectric applications: Photo-activation, thermal activation, and air stability

Abstract: Understanding doping mechanisms is essential for optimizing the doping efficiency and rationally designing next generations of dopants and organic materials. Over the last years, N-DMBI became a reference solution-processed n-type dopant, affording decent air-stability and record power factor for thermoelectric energy generation. Nevertheless, a complete

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Cited by 26 publications
(39 citation statements)
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“…Our quantitative data complement and confirm those reported in the literature, demonstrating that DMBI-Ox is produced in non-negligible amounts during the timespan normally necessary for sample handling in doping experiments . Nonetheless, DMBI-H has been used successfully under a variety of experimental conditions with comparable performances. , …”
Section: Characterization Of Dmbi-h Stabilitysupporting
confidence: 85%
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“…Our quantitative data complement and confirm those reported in the literature, demonstrating that DMBI-Ox is produced in non-negligible amounts during the timespan normally necessary for sample handling in doping experiments . Nonetheless, DMBI-H has been used successfully under a variety of experimental conditions with comparable performances. , …”
Section: Characterization Of Dmbi-h Stabilitysupporting
confidence: 85%
“…There could be different explanations for such a phenomenon. On the one side, the presence of water could stabilize one or more of the charged intermediates that Demadrille hypothesized, thus slowing down the reaction . Conversely, water could react with one of the transient species, again leading to more stable intermediates.…”
Section: Characterization Of Dmbi-h Stabilitymentioning
confidence: 99%
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“…This is possibly due to the existence of the cation species in N-DMBI-doped samples, as reported in literature. [36][37][38] Next, we employed OFET as the platform to evaluate the effect of doping on the electrical properties of the semiconductor. TGBC devices with doped semiconductors as active layers were fabricated.…”
Section: P-/n-doping Of Pbbt-4t-2f At Low Doping Levels and Ofet Char...mentioning
confidence: 99%
“…Chemical dopants can be introduced into OMIECs to modify their coloration. For instance, electron‐rich chemical dopants such as 4(1,3 dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)phenyl)dimethylamine (N‐DMBI) [ 127 ] or amines [ 18 ] can be used to donate electrons into electron‐deficient OMIECs. The injection of electrons into the LUMO of n‐type OMIECs increases the optical bandgap of the OMIEC, thereby bleaching the absorption of the backbone.…”
Section: Omiec Property Changesmentioning
confidence: 99%