“…It should be noted that the light absorbance of CdS is higher than that of In2S3 due to its smaller band gap, which is the reason for the large scontribution of CdS interlayer to JSC than In2S3 layer [42,45,46]. Therefore, CdS (Eg ≈ 2.4 eV) or other similar interfacial layer deposited on mesoporous TiO2 prior to the main absorber QDs with a smaller Eg is an effective strategy to improve the photocurrent density by absorbing high-energy photons and enhancing QDs loading [19,42,46,51,52]. However, the VOC value was rarely affected by the CdS interlayer because, as shown in Fig.3c, it hardly restricted the electron back-transfer and recombination via the route 2 due to its position, which is a main recombination route for the carriers generated from PbS.…”