Strategic PbS quantum dot-based multilayered photoanodes for high efficiency quantum dot-sensitized solar cells

Basit, Muhammad Abdul; Abbas, Muhammad A.; Jung, Eun Sun; Park, Young Min; Bang, Jin Ho; Park, Tae Joo

doi:10.1016/j.electacta.2016.06.075

Cited by 42 publications

(7 citation statements)

References 64 publications

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“…To design the optimal architecture of photoanodes with TiO 2 /chalcogenide QDs for high photocurrents, enhancement of both charge transfer kinetics at the TiO 2 /chalcogenide QD interface and charge transport via the TiO 2 films should be simultaneously considered . As a general strategy, the introduction of a surface passivation layer (SPL) on TiO 2 film has led to significant improvements in sensitized PV cells. , Particularly, TiCl 4 treatment to form a TiO 2 SPL at the interface of TiO 2 /light-harvesting materials has led to an about 10–30% photocurrent density increase . In dye-sensitized solar cells (DSSCs) with a SPL, performance enhancement has been attributed to the improved electron injection, mostly because of driving force enhancement through the conduction band (CB) shift of TiO 2 and suppression of electron recombination at the TiO 2 /dye interface .…”

Section: Introductionmentioning

confidence: 99%

Interfacial Engineering at Quantum Dot-Sensitized TiO₂ Photoelectrodes for Ultrahigh Photocurrent Generation

Kim

et al. 2021

ACS Appl. Mater. Interfaces

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Metal oxide semiconductor/chalcogenide quantum dot (QD) heterostructured photoanodes show photocurrent densities >30 mA/cm 2 with ZnO, approaching the theoretical limits in photovoltaic (PV) cells. However, comparative performance has not been achieved with TiO 2 . Here, we applied a TiO 2 (B) surface passivation layer (SPL) on TiO 2 /QD (PbS and CdS) and achieved a photocurrent density of 34.59 mA/cm 2 under AM 1.5G illumination for PV cells, the highest recorded to date. The SPL improves electron conductivity by increasing the density of surface states, facilitating multiple trapping/detrapping transport, and increasing the coordination number of TiO 2 nanoparticles. This, along with impeded electron recombination, led to enhanced collection efficiency, which is a major factor for performance. Furthermore, SPL-treated TiO 2 /QD photoanodes were successfully exploited in photoelectrochemical water splitting cells, showing an excellent photocurrent density of 14.43 mA/cm 2 at 0.82 V versus the Reversible Hydrogen Electrode (RHE). These results suggest a new promising strategy for the development of high-performance photoelectrochemical devices.

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Section: Introductionmentioning

confidence: 99%

Interfacial Engineering at Quantum Dot-Sensitized TiO₂ Photoelectrodes for Ultrahigh Photocurrent Generation

Kim

et al. 2021

ACS Appl. Mater. Interfaces

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“…The field of QDSSCs took a leap forward with the introduction of CdS and CdSe cosensitization, which increased the power conversion efficiency (PCE) of QDSSCs to 4.22% . Since then, many inorganic QDs have been explored as efficient light harvesters as part of efforts to further improve the PCE of QDSSCs. − During the past few years, progress in the development of QDSSCs has been very slow and no major improvements of the PCE of QDSSCs have been reported. In very recent years, however, the interest in QDSSCs has been renewed by a series of research articles demonstrating significantly enhanced PCEs and solar cell stability. ,− …”

Section: Introductionmentioning

confidence: 99%

Revival of Solar Paint Concept: Air-Processable Solar Paints for the Fabrication of Quantum Dot-Sensitized Solar Cells

et al. 2017

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One way to revolutionize solar energy production and expand it to a large scale is to reduce the manufacturing cost and complexity of the fabrication process. The ability to make solar cells on the surface of any shape would further transform this technology. Quantum dot-sensitized solar cells (QDSSCs) are an ideal candidate to push solar cell technology in this direction. In this regard, making a paint that can be applied by a paint brush to any transparent conductive surface to turn it into the photoanode of QDSSCs is the ultimate goal. We herein demonstrate the feasibility of one-coat fabrication of QDSSCs from a lead sulfide (PbS)-based solar paint. This is possible because of its unique ability to regenerate after oxidation occurred during heat treatment in air. Hence, the whole fabrication process can be carried out in air unlike a first-generation solar paint based on cadmium sulfide (CdS) and cadmium selenide (CdSe). Two solar paints using a commercially available titanium dioxide (TiO 2 ) and a p-type TiO 2 powder were synthesized and evaluated. Also, the performance-limiting parameters are thoroughly investigated using various spectroscopic and electrochemical characterization methods. The implication of new insights into the PbS-based solar paint for further development of paint-on solar cells is discussed.

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“…PbSe films possess the τ n value of 0.696 ms, while the value rises to 1.147 ms for PbCdSe (0.025 M) film. The longer carrier lifetime attributes to increased probability of electron propagation through the external circuit with less chances of recombination due to effective passivation of the surface states. , Although, the other compositions of PbCdSe films bear nearly the same level of carrier lifetime with that of the 0.025 M film, the comparatively high charge transfer resistance values result in poor PEC performances for those films.…”

Section: Resultsmentioning

confidence: 99%

Optimal Blending of PbSe and CdSe in Polycrystalline PbCdSe Nanocomposite Film: Improved Carrier Multiplication and Enhanced Photoconversion Efficiency

Hazra

Datta

2019

ACS Appl. Mater. Interfaces

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The present work reports galvanostatic electro-co-deposition of n-PbCdSe semiconductor (SC) films on FTO substrate from the respective precursors. Self-designed matrices were formulated at variable concentrations of Pb2+ in the deposition medium. The semiconductor films constitute an intermixed structure of close-packed PbSe and CdSe nanoparticles (NPs), and the band gap (E g) was effectively tuned in the range 0.99–1.47 eV for the variable compositions. Energy dispersive spectroscopy studies revealed that Cd exists in low level in the film matrix compared to Pb, presumably due to competitive deposition kinetics of the two chalcogenide compounds and the crystallite sizes determined from XRD studies, ranges between 15 and 12 nm, which corresponds to the size quenching of SC-NPs with increased Pb2+ concentration. The durability studies identify the most stable film developed at 0.025 M Pb2+ concentration. PbSe materials are typically characterized with impact ionization which effectively induces carrier multiplication (CM) in the quasi Type-II PbCdSe composite, exhibiting reasonably high photoconversion efficiency (PCE) of 6.14% with current output of 19.2 mA cm–2 for the optimal PbCdSe film.

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Strategic PbS quantum dot-based multilayered photoanodes for high efficiency quantum dot-sensitized solar cells

Cited by 42 publications

References 64 publications

Interfacial Engineering at Quantum Dot-Sensitized TiO₂ Photoelectrodes for Ultrahigh Photocurrent Generation

Interfacial Engineering at Quantum Dot-Sensitized TiO₂ Photoelectrodes for Ultrahigh Photocurrent Generation

Revival of Solar Paint Concept: Air-Processable Solar Paints for the Fabrication of Quantum Dot-Sensitized Solar Cells

Optimal Blending of PbSe and CdSe in Polycrystalline PbCdSe Nanocomposite Film: Improved Carrier Multiplication and Enhanced Photoconversion Efficiency

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Strategic PbS quantum dot-based multilayered photoanodes for high efficiency quantum dot-sensitized solar cells

Cited by 42 publications

References 64 publications

Interfacial Engineering at Quantum Dot-Sensitized TiO2 Photoelectrodes for Ultrahigh Photocurrent Generation

Interfacial Engineering at Quantum Dot-Sensitized TiO2 Photoelectrodes for Ultrahigh Photocurrent Generation

Revival of Solar Paint Concept: Air-Processable Solar Paints for the Fabrication of Quantum Dot-Sensitized Solar Cells

Optimal Blending of PbSe and CdSe in Polycrystalline PbCdSe Nanocomposite Film: Improved Carrier Multiplication and Enhanced Photoconversion Efficiency

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Interfacial Engineering at Quantum Dot-Sensitized TiO₂ Photoelectrodes for Ultrahigh Photocurrent Generation

Interfacial Engineering at Quantum Dot-Sensitized TiO₂ Photoelectrodes for Ultrahigh Photocurrent Generation