Review on the deposition, structure and properties of high entropy oxide films: current and future perspectives

Salian, Ashritha; Mandal, Saumen

doi:10.1007/s12034-021-02617-w

Cited by 11 publications

(13 citation statements)

References 53 publications

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“…[ 16–19 ] The high entropy alloys may lead to applications in new photodetectors, lasers, scintillators, and memristors. [ 20 ]…”

Section: Introductionmentioning

confidence: 99%

Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO₂/W Structure for Artificial Synapses with Visual Perception

Liu

et al. 2023

Adv Elect Materials

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The development of vision bionic systems is indispensable for the perception, memory, and processing of optical signals, which promotes the exploration of efficient visual perception systems. In this work, a simple and novel two‐terminal optoelectronic memristor based on the CuAlAgCr/TiO2/W (CTW) structure is prepared, where the CuAlAgCr high‐entropy alloys are employed as the top electrode for the first time. Before annealing, the CTW optoelectronic memristor exhibited fascinating performance, including uniformly distributed operating voltage, reliable data retention, and a higher switching ratio. Moreover, the optoelectronic memristor can be reversibly switched between volatile and nonvolatile memories by adjusting compliance currents. The CTW optoelectronic memristor annealed in air exhibits various artificial synaptic functions, such as short‐term memory, optical learning, and forgetting behavior under the illumination of the laser. The photo‐response current is increased from nano‐ampere to micro‐ampere level. Furthermore, a logic function unit based on CTW optoelectronic memristor is proposed, which realizes “AND” operation. Furthermore, first‐principles calculations of the CTW structure are performed to describe the influence of photocarriers on the barrier height at the CuAlAgCr‐TiO2 interface, revealing the working mechanism of the CTW optoelectronic memristor. This work has greatly facilitated the development of optically operated artificial synaptic devices and vision bionic systems.

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“…[ 16–19 ] The high entropy alloys may lead to applications in new photodetectors, lasers, scintillators, and memristors. [ 20 ]…”

Section: Introductionmentioning

confidence: 99%

Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO₂/W Structure for Artificial Synapses with Visual Perception

Liu

et al. 2023

Adv Elect Materials

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“…When developing an equimolar metallic alloy system in 2004, high entropy alloys were created and provided the option to precisely manage configurational entropy while influencing the phase stability of solid solutions 10 . Motivated by high entropy alloys, the field of high entropy materials was further explored and expanded in the field of ceramics 11,12 . The first material discovered in high entropy ceramics was high entropy oxides by Rost et al.…”

Section: Introductionmentioning

confidence: 99%

“…10 Motivated by high entropy alloys, the field of high entropy materials was further explored and expanded in the field of ceramics. 11,12 The first material discovered in high entropy ceramics was high entropy oxides by Rost et al in 2015, 13 who used the concept of entropy engineering used in high entropy alloys, on ionic compounds by filling the cation sites with a variety of elements in equal proportions that shared the same lattice. High entropy oxides are entropy-stabilized, configura- tionally disordered oxides with a maximal configurational entropy of mixing.…”

Section: Introductionmentioning

confidence: 99%

A review on high entropy silicides and silicates: Fundamental aspects, synthesis, properties

Salian

Sengupta

Iteesha

et al. 2023

Int J Applied Ceramic Tech

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Metal silicides and silicates belong to the silicon-based non-oxide and oxide ceramics family with exceptional properties. Silicides face fatal oxidation at low temperatures and intrinsic brittleness, whereas silicates face instability in phase at high temperatures which restricts its usage in vast engineering applications. Hence, the ceramic community introduced the concept of high entropy in metal silicides and silicates. Since 2019, high entropy silicides and silicates, a multicomponent system, have created new avenues for materials discovery and design. High entropy silicides displayed elevated properties than the traditional silicides aiming its applications in microelectronic, hightemperature oxidation resistance coatings, and structural materials. Similarly, high entropy silicates displayed improved properties than the traditional silicates making them the most promising materials for environmental and thermal barrier coating applications for hot section components in gas turbines. The review focuses on specific case studies to emphasize the latest research and developments in high entropy silicides and silicates. Synthesis approaches employed in developing high entropy silicides and silicates and their structural and microstructural outcomes are addressed. The possible application is predicted based on the overview of the properties explored to date. The review concludes with future possibilities offered by the high entropy silicides and silicates.

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“…Also, the spinel structure in (CoCrFeMnNi) 3 O 4 is stabilized at 850 °C and perovskite in the case of (Bi 0.2 Na 0.2 K 0.2 Ba 0.2 Ca 0.2 )TiO 3 at 840 °C. − HEOs find applications in batteries, ferroelectrics, magnetic, catalytic, thermal barrier coatings, etc . Moreover, the application as a passive-dielectric in TFTs demands HEOs, whose stabilization is comparatively effortless because of the unique multicationic configuration, which maintains the structural chaos at the atomic level . So far, to the best of our knowledge, HEO materials are not implemented as gate dielectrics in TFT applications.…”

Section: Introductionmentioning

confidence: 99%

“…17 Moreover, the application as a passive-dielectric in TFTs demands HEOs, whose stabilization is comparatively effortless because of the unique multicationic configuration, which maintains the structural chaos at the atomic level. 18 So far, to the best of our knowledge, HEO materials are not implemented as gate dielectrics in TFT applications.…”

Section: Introductionmentioning

confidence: 99%

Evolution of High Dielectric Permittivity in Low-Temperature Solution Combustion-Processed Phase-Pure High Entropy Oxide (CoMnNiFeCr)O for Thin Film Transistors

Salian

Pujar

Vardhan

et al. 2023

ACS Appl. Electron. Mater.

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An investigation of dielectric permittivity on the sintered high entropy oxide (HEO) capacitor composed of Co, Cr, Fe, Mn, and Ni (i.e., (CoCrFeMnNi)O) developed using solution combustion synthesis is performed. Stabilization of the phase in HEO is extremely important as it has a direct influence on the properties. In order to explore phase stabilization, in-depth studies of thermal, structural, morphological, and compositional analyses are carried out. The optimized processing parameters are further implemented on depositing (CoCrFeMnNi)O dielectric thin films followed by a thin film transistor. Irrespective of the reaction medium, the precursors undergo combustion at a low temperature below 250 °C, resulting in amorphous HEO. Upon crystallization at 500 °C, no secondary impurity oxides were detected and phase-stabilized to a spinel structure (Fd3m). A homogeneous distribution of all five cations without any segregation and a completely disordered occupancy of the cations were displayed by the bulk and thin films of HEOs. The spinel (CoCrFeMnNi)O exhibited high permittivity, with values approximately 7.3 × 102 (in bulk) and 3 × 101 (in a thin film), measured at 1 kHz owing to the entropy stabilization effect of HEO. Due to their high permittivity and low leakage current density (∼10–8 A/cm2), the (CoMnNiFeCr)O thin film was integrated into thin film transistors (TFTs) with molybdenum disulfide-channel. TFTs showed a field effect mobility of 8.8 cm2 V–1 s–1, an on–off ratio of approximately 105, a threshold voltage of −1.5 V, and a subthreshold swing of 0.38 V/dec. The low voltage operation (<5 V) of these TFTs makes solution combustion-derived HEO (CoMnNiFeCr)O a potential candidate in microelectronics and optoelectronics applications.

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Review on the deposition, structure and properties of high entropy oxide films: current and future perspectives

Cited by 11 publications

References 53 publications

Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO₂/W Structure for Artificial Synapses with Visual Perception

Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO₂/W Structure for Artificial Synapses with Visual Perception

A review on high entropy silicides and silicates: Fundamental aspects, synthesis, properties

Evolution of High Dielectric Permittivity in Low-Temperature Solution Combustion-Processed Phase-Pure High Entropy Oxide (CoMnNiFeCr)O for Thin Film Transistors

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Review on the deposition, structure and properties of high entropy oxide films: current and future perspectives

Cited by 11 publications

References 53 publications

Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO2/W Structure for Artificial Synapses with Visual Perception

Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO2/W Structure for Artificial Synapses with Visual Perception

A review on high entropy silicides and silicates: Fundamental aspects, synthesis, properties

Evolution of High Dielectric Permittivity in Low-Temperature Solution Combustion-Processed Phase-Pure High Entropy Oxide (CoMnNiFeCr)O for Thin Film Transistors

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Product

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Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO₂/W Structure for Artificial Synapses with Visual Perception

Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO₂/W Structure for Artificial Synapses with Visual Perception