Review on the degradation of GaN-based lateral power transistors

Santi, Carlo De; Buffolo, Matteo; Rossetto, Isabella; Bordignon, Thomas; Brusaterra, Enrico; Caria, Alessandro; Chiocchetta, Francesca; Favero, Diana; Fregolent, Manuel; Masin, F.; Modolo, Nicola; Nardo, A.; Piva, Francesco; Rampazzo, F.; Sharma, C. P.; Trivellin, Nicola; Zhan, G.; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio

doi:10.1016/j.prime.2021.100018

Cited by 4 publications

(4 citation statements)

References 77 publications

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“…The current technological approach led to the development of GaN semiconductor power devices with a lateral structure. In the lateral structure, the electron flow between the source and drain terminals features an inhomogeneous distribution of the electric field in the device, showing a peak in specific device areas; this phenomenon limits its full voltage-blocking technological potential [13]. Vertical structures for GaN power devices are under development [14].…”

Section: Gan Technology: Overview and Developmentmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

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Section: Gan Technology: Overview and Developmentmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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“…These features make AlGaN/GaN HEMTs uniquely suited for demanding applications that require high-power handling, high-frequency operation, and robust performance even in extreme conditions [9][10][11][12][13][14]. These advanced devices have emerged as key components in the field of electronics and power electronics, offering a wide range of benefits that make them indispensable in numerous cutting-edge applications [15][16][17][18]. AlGaN/GaN HEMTs have revolutionized power electronics.…”

Section: Introductionmentioning

confidence: 99%

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Chakraborty,

Kim

2023

Micromachines

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We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits variability contingent upon the stress voltage and power dissipation, thereby influencing the long-term reliability of the devices. The accuracy of the channel temperature assumes a pivotal role in MTTF determination, a parameter measured and simulated through TCAD Silvaco device simulation. Under low electric field stress, a gradual degradation of IDSS is noted, accompanied by a negative shift in threshold voltage (ΔVT) and a substantial increase in gate leakage current (IG). Conversely, the high electric field stress condition induces a sudden decrease in IDSS without any observed shift in threshold voltage. For the low and high electric field conditions, MTTF values of 360 h and 160 h, respectively, were determined for on-wafer AlGaN/GaN HEMTs.

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“…Identifying the signature with the activation energy and the apparent cross section provides crucial information on the cause leading to a reduced steady-state or dynamic performance. Large numbers of reports have been reviewed in the literature [19][20][21][22][23][24][25][26][27][28][29] and are referenced into the Table 1, listed according to their activation energies and their apparent capture cross section. Identifying the signature with the activation energy and the apparent cross section provides crucial information on the cause leading to a reduced steady-state or dynamic performance.…”

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confidence: 99%

“…The first activation energy around 0.44 eV can be ascribed to different defects. Some authors suggest that its origin, still unclear, could possibly be related to the presence of hydrogen or carbon atoms [21]. However in [27], the authors suggest that in heavily carbondoped devices, the measured time constant is mainly dominated by the transport through a defect band and not activation to the band edge; the activation energies would be, in this case, related to the transport process and not to the de-trapping process.…”

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confidence: 99%

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

et al. 2023

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In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a deep understanding of the device’s behaviour before any development of power converters. This study can ultimately be used to model observed trap effects and, thus, improve the equivalent electrical model. Using an in-house circuit and a specific experimental setup, a current-collapse phenomenon inherent to gallium nitride semiconductor is studied on planar 650 V—6 A GaN diodes by applying high voltage stresses over a wide range of temperatures. With this method, useful data on activation energy and capture cross section of electrical defects linked to dynamic RON are extracted. Finally, the origins of such defects are discussed and attributed to carbon-related defects.

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Review on the degradation of GaN-based lateral power transistors

Cited by 4 publications

References 77 publications

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

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