2019
DOI: 10.1149/2.0201903jss
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Review—On Atomic Layer Deposition: Current Progress and Future Challenges

Abstract: Atomic layer deposition (ALD) relies on self-limiting reaction within a cyclic process and is being considered as a potential technique for synthesizing nanomaterials with precisely controlled internal structure. Therefore, the design and synthesis of advanced ultrafine nanomaterials becomes feasible through a rigorous control over the morphology, micro-and nano-structure, composition, thickness and particle size. Currently, ALD is mostly adopted for semiconductor applications; however, several other areas (i.… Show more

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Cited by 64 publications
(68 citation statements)
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“…To minimize the impedance values, the thickness of the coating layers can be controlled by thin‐film synthesis techniques such as chemical vapor deposition [ 246 ] and atomic layer deposition. [ 247 ]…”
Section: Discussionmentioning
confidence: 99%
“…To minimize the impedance values, the thickness of the coating layers can be controlled by thin‐film synthesis techniques such as chemical vapor deposition [ 246 ] and atomic layer deposition. [ 247 ]…”
Section: Discussionmentioning
confidence: 99%
“…Additionally, a successful industrial-level ALD system is required for applying ALD to SOFC fabrication with reasonable cost-effectiveness. Recently, various ALD strategies, such as batch ALD, roll-to-roll ALD, spatial ALD, and atmospheric pressure ALD, are being actively researched to improve throughput while retaining unique advantages of ALD process [86,154]. Only after such considerations, investigations on the applicability of ALD to SOFCs could have useful practical consequences, advancing beyond the laboratory scale to the prototyping level.…”
Section: Discussionmentioning
confidence: 99%
“…Afterwards, ML was developed by Professors Aleskovskii and Koltsov from the USSR Academy of Sciences [54], where metal oxides were deposited using alternating exposure of metal chloride precursors and water. Several conference papers from the early 1960s described TiO 2 and GeO 2 ML, but these studies were overlooked by researchers from outside the Soviet Union because they were published only in Russian [55]. In Japan, the ALD process was called molecular layer epitaxy.…”
Section: Ald Mechanismmentioning
confidence: 99%