Review of SiC based Power Semiconductor Devices and their Applications

Adappa, Raksha; Suryanarayana, K.; Hatwar, H. Swathi; Rao, M Ravikiran

doi:10.1109/icicict46008.2019.8993255

Cited by 14 publications

(11 citation statements)

References 29 publications

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“…Since the beginning, MOSFETs have been the most successful devices and are mainly employed for switching operations in power converters [135]. The structure of SiC power MOSFETs is similar to that of Si MOSFETs with an insulated gate structure.…”

Section: Sic Mosfetsmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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Section: Sic Mosfetsmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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“…Silicon (Si) has been one of the most used semiconductor materials over the past few years due to its low-cost, established processing technology, and high crystal purity. 41 It has the advantage of continuously changing its electrical conductivity by incorporating dopant atoms into the crystal lattice. 42 These dopant atoms consist of electron acceptor and/ or donor impurities that tune the semiconductor's conduction and valence bands to control electron transfer performance.…”

Section: Materials For the Betavoltaic Batteriesmentioning

confidence: 99%

Betavoltaic Nuclear Battery: A Review of Recent Progress and Challenges as an Alternative Energy Source

et al. 2023

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Nuclear energy is considered a suitable and eco-friendly alternative for combating the rising greenhouse gases in the atmosphere from excessive fossil fuel consumption. Betavoltaic battery is a form of nuclear technology that utilizes the decay energy of β-emitting radioisotopes to produce electrical power. Owing to its long shelf life, high specific energy density, and ability to work under extreme conditions, it has been a subject of considerable research attention in the past few years. Despite significant research on betavoltaic battery, several impediments to realizing high energy conversion efficiency and maximum power density have yet to be overcome. This Review Article comprehensively discusses the challenges and recent research progress of betavoltaic battery development. First, promising strategies for improving betavoltaic battery performance, theoretical principles, and equations for quantifying betavoltaic battery efficiency are discussed. Then a thorough overview of several β-radiation absorbing materials, such as traditional semiconductors, metal oxides, and organic/inorganic materials, is explored. Finally, the outlook for betavoltaic battery is discussed before concluding the review.

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“…Additionally, the SiC MOSFET offers the highest power capability. The operation of the SiC MOSFET is the same as that of the Si MOSFET: with appropriate gate-source voltage, the device can be turned on, and the body diode is used for reverse conduction during off state [ 8 , 9 ]. A general comparison of Si MOSFET, normally off GaN HEMTs, and SiC MOSFET is shown in Table 2 .…”

Section: Introductionmentioning

confidence: 99%

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

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Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

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Review of SiC based Power Semiconductor Devices and their Applications

Cited by 14 publications

References 29 publications

Review of Silicon Carbide Processing for Power MOSFET

Review of Silicon Carbide Processing for Power MOSFET

Betavoltaic Nuclear Battery: A Review of Recent Progress and Challenges as an Alternative Energy Source

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

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