Review of Recent Advances in Applications of Vapor-Phase Material Infiltration Based on Atomic Layer Deposition

Subramanian, Ashwanth; Tiwale, Nikhil; Nam, Chang‐Yong

doi:10.1007/s11837-018-3141-4

Cited by 48 publications

(56 citation statements)

References 55 publications

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“…31 ALD of metal oxide precursors into cylinder-and gyroidforming BCPs has been used to generate 1D and 3D nanostructures for a broad variety of nanotechnologies such as gas sensors, solar cells, photocatalysts, and pattern transfer masks. 14,32,35,[40][41][42] While the majority of the reports exploiting infiltration synthesis of BCPs are focused on diblock copolymers, the process is also applicable to BCPs containing three or more blocks such as triblock terpolymers (TBTPs). 37 In this work we demonstrate the infiltration of inorganic species into poly(1,1-dimethyl silacyclobutane-block-styrene-block-lactide) (PDMSB-b-PS-b-PLA or DSL), a silicon-containing TBTP with two organic blocks, PS and PLA.…”

Section: Introductionmentioning

confidence: 99%

Resolving Triblock Terpolymer Morphologies by Vapor-Phase Infiltration

et al. 2020

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Section: Introductionmentioning

confidence: 99%

Resolving Triblock Terpolymer Morphologies by Vapor-Phase Infiltration

et al. 2020

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“…These final hybrid materials are intermixed organicinorganic hybrid structures with properties distinctly different from the original polymer. 11,12 For example, VPI has been used to increase the toughness of spider silk, 13 increase the electrical conductivity of semiconducting polymers, 14 and increase the solvent stability and separation performance of membranes. 15 A recent investigation examined the use of vapor phase infiltration to incorporate inorganic materials into block co-polymers containing a rubber (elastomeric) block.…”

Section: Introductionmentioning

confidence: 99%

Vapor phase infiltration of zinc oxide into thin films of cis-polyisoprene rubber

2020

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“…[ 39,40 ] Moreover, modifying ZnO precursor with photosensitizer 2‐nitrobenzaldehyde [ 41,42 ] or dispersing ZnO nanoparticles into photosensitive agents [ 43 ] has also been studied for UV‐NIL. Similarly, nanopattern templates have also been utilized for fabricating ZnO nanopatterns by vapor‐phase infiltration synthesis of zinc ALD precursor into block copolymer templates [ 44,45 ] and in electron‐beam lithography (EBL) nanopatterned SU‐8. [ 27,45 ]…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, nanopattern templates have also been utilized for fabricating ZnO nanopatterns by vapor‐phase infiltration synthesis of zinc ALD precursor into block copolymer templates [ 44,45 ] and in electron‐beam lithography (EBL) nanopatterned SU‐8. [ 27,45 ]…”

Section: Introductionmentioning

confidence: 99%

Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route

Tiwale

Senanayak

Rubio‐Lara

et al. 2021

Adv Elect Materials

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Zinc oxide (ZnO) has been extensively investigated for use in large‐area electronics; in particular, the solution‐processing routes have shown increasing promise towards low‐cost fabrication. However, top‐down fabrication approaches with nanoscale resolution, towards aggressively scaled device platforms, are still underexplored. This study reports a novel approach of direct‐write electron‐beam lithography (DW‐EBL) of solution precursors as negative tone resists, followed by optimal precursor processing to fabricate micron/nano‐field‐effect transistors (FETs). It is demonstrated that the mobility and current density of ZnO FETs can be increased by two orders of magnitude as the precursor pattern width is decreased from 50 µm to 100 nm. These nano‐FET devices exhibit field‐effect mobility exceeding ≈30 cm2 V−1 s−1 and on‐state current densities reaching 10 A m−1, the highest reported so far for direct‐write precursor‐patterned nanoscale ZnO FETs. Using atomic force microscopy and parametric modeling, the origin of such device performance improvement is investigated. The findings emphasize the influence of pre‐decomposition nanoscale precursor patterning on the grain morphology evolution in ZnO and, consequently, open up large‐scale integration, and miniaturization opportunities for solution‐processed, high‐performance nanoscale oxide FETs.

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Review of Recent Advances in Applications of Vapor-Phase Material Infiltration Based on Atomic Layer Deposition

Cited by 48 publications

References 55 publications

Resolving Triblock Terpolymer Morphologies by Vapor-Phase Infiltration

Resolving Triblock Terpolymer Morphologies by Vapor-Phase Infiltration

Vapor phase infiltration of zinc oxide into thin films of cis-polyisoprene rubber

Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route

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