Review of On-Chip Inductor Structures With Magnetic Films

Gardner, Donald S.; Schrom, G.; Paillet, F.; Jamieson, Brice; Karnik, Tanay; Borkar, S.

doi:10.1109/tmag.2009.2030590

Cited by 301 publications

(133 citation statements)

References 38 publications

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“…The total thickness of the NiFe/AlN multilayer composite is 2.08 µm and was chosen as a compromise between the total deposition time of the layered stack and significant RF performance enhancement. The thickness of 100 nm chosen for individual NiFe layers is a good compromise for achieving high total volume ratio of NiFe, by still limiting the induced RF currents within the individual layers [1]. Vertical interconnects were created by etching the magnetic/dielectric layers in a Veeco Nexus IBE dry ion beam etching tool.…”

Section: Concept Design and Fabricationmentioning

confidence: 99%

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Permeability Enhancement by Multilayer Ferromagnetic Composites for Magnetic-Core On-Chip Inductors

Shah

Liljeholm

Ebefors

et al. 2014

IEEE Microw. Wireless Compon. Lett.

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Abstract-This paper reports about un-patterned ferromagnetic NiFe/AlN multilayer composites used as advanced magnetic core materials for on-chip and interposer integrated inductances. The proposed composite structure reduces RF induced currents and thus pushes the permeability cut-off to beyond 3.7 GHz, which is by a factor of 7.1 higher than for homogeneous NiFe layers of same thickness. To the best knowledge of the authors, we achieve the highest effective relative permeability of 28 at 1 GHz, highest ferromagnetic resonance frequency and highest inductance enhancement factor above 1 GHz ever reported for devices based on on-chip un-patterned NiFe magnetic cores. A single loop inductor is also implemented as a technology demonstrator, achieving an inductance enhancement of 4.8 and a quality factor enhancement of 4.5 at 400 MHz.

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Section: Concept Design and Fabricationmentioning

confidence: 99%

“…O N-CHIP and interposer integrated inductors, used as passive components in RFICs or in system-in-package integrated components, are currently employed as air-core inductors with a maximum inductance density of 200 nH/mm 2 [1]. Their inductance per area would significantly be enhanced by magnetic core materials.…”

Section: Introductionmentioning

confidence: 99%

Permeability Enhancement by Multilayer Ferromagnetic Composites for Magnetic-Core On-Chip Inductors

Shah

Liljeholm

Ebefors

et al. 2014

IEEE Microw. Wireless Compon. Lett.

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“…A possible solution would be excluding the inductors using a switched capacitor network [15], [16], however these are often not efficient outside their optimum voltage conversion ratio [17]. Achieving an efficient PwrSoC solution would require an inductor having a high quality factor [8], [18]. The PwrSiP products available have power densities of 0.2-0.5 W/mm 3 , and efficiencies around 90-95 % [8].…”

Section: Introductionmentioning

confidence: 99%

Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

Hertel

Nour

Knott

2018

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-This paper presents a power supply using an increased switching frequency to minimize the size of energy storing components, thereby addressing the demands for increased power densities in power supplies. 100 MHz and higher switching frequencies have been used in resonant power converters, which along with the possible integration of passive components on silicon wafer, present a beneficial solution in applications such as mobile phones. This paper presents a design for a 9 W class E resonant power converter in an 0.18 µm CMOS process. The converter is driven by a self oscillating gate drive, which is presented in an in-depth mathematical analysis. The gate resistance of the designed transistors is of critical importance in order to achieve the correct phase shift required for zero-voltageswitching. The Z-parameter method is used to characterize the transistors which is verified through simulations. The required spiral inductors was modeled, and simulations show Q values of as high as 14 at a switching frequency of 250 MHz. Simulations of the converter show an efficiency of 55 % with a self oscillating gate drive. However the modeled inductor was not adequate for operating with the self oscillating gate drive, presenting a future challenge for power supplies on chip.

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“…[1][2]. Their main technologically requested parameters are high magnetic permeability and low coercivity.…”

Section: Introductionmentioning

confidence: 99%

Structure and magnetic properties of FeNi/Ti sputtered multilayers

Alzola

Svalov

Mayura

et al. 2013

EPJ Web of Conferences

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Abstract. The microstructure, anisotropic magnetoresistance, magnetic properties and magnetic domain structure of sputtered FeNi films and [Ti/FeNi] n (n = 2-16) multilayers were comparatively analyzed. It was found that although the grain size increases with an increase of the FeNi thickness both in the case of FeNi films and [Ti/FeNi] n multilayers, it did not exceed 25 nm. The values of anisotropic magnetoresistance for FeNi films and [Ti/FeNi] n multilayers were close to each other showing a weak dependence on the total thickness of the multilayered structure. Coercivity for multilayers was found to be smaller than the coercivity of single layer FeNi films. Despite the absence of a direct exchange interaction between FeNi neighboring layers in the [Ti/FeNi] n structures, their domain structures were found to be quite different from magnetic domains in single layer films due to stray field compensation in the multilayers. Obtained results are useful for the development of sensitive elements for small magnetic field detectors and planar inductors.

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Review of On-Chip Inductor Structures With Magnetic Films

Cited by 301 publications

References 38 publications

Permeability Enhancement by Multilayer Ferromagnetic Composites for Magnetic-Core On-Chip Inductors

Permeability Enhancement by Multilayer Ferromagnetic Composites for Magnetic-Core On-Chip Inductors

Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

Structure and magnetic properties of FeNi/Ti sputtered multilayers

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