Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistors

Deen, M. Jamal; Pascal, F.

doi:10.1049/ip-cds:20040106

Cited by 29 publications

(23 citation statements)

References 33 publications

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“…There is evidence that "MOS-like" noise can be observed from defects in the oxide that overlies the base-emitter junction of BJTs with poly-crystalline Si emitters [206], [209]- [211]. However, although the temperature dependence of the noise of BJTs has been measured by a number of authors [207], [212]- [214], current knowledge about the microstructure of the defects responsible for the noise is not nearly as advanced for BJTs as for MOS devices, or even for GaN HEMTs. The interested reader is directed to [214], e.g., for a review of these studies.…”

Section: A Brief Note On Bipolar Transistorsmentioning

confidence: 99%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

157

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This paper reviews and compares predictions of the Dutta-Horn model of low-frequency excess ( ) noise with experimental results for thin metal films, MOS transistors, and GaN/AlGaN high-electron mobility transistors (HEMTs). For metal films, mobility fluctuations associated with carrier-defect scattering lead to noise. In contrast, for most semiconductor devices, the noise usually results from fluctuations in the number of carriers due to charge exchange between the channel and defects, usually at or near a critical semiconductor/insulator interface. The Dutta-Horn model describes the noise with high precision in most cases. Insight into the physical mechanisms that lead to noise in microelectronic materials and devices has been obtained via total-ionizing-dose irradiation and/or thermal an- nealing, as illustrated with several examples. With the assistance of the Dutta-Horn model, measurements of the noise magnitude and temperature and/or voltage dependence of the noise enable estimates of the energy distributions of defects that lead to noise. The microstructure of several defects and/or impurities that cause noise in MOS devices (primarily O vacancies) and GaN/AlGaN HEMTs (e.g., hydrogenated impurity centers, N vacancies, and/or Fe centers) have been identified via experiments and density functional theory calculations.Index Terms-Border traps, gallium nitride, HEMTs, interface traps, low-frequency noise, MOS devices, noise, oxide traps, radiation response, silicon carbide. 0018-9499

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Section: A Brief Note On Bipolar Transistorsmentioning

confidence: 99%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

157

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“…In this case, the dependence S 1/f IB ∼ I 2 B observed in the studied HBTs as well as its A −1 e evolution indicate that the main 1/f noise sources are located in the intrinsic base emitter region [6]. Concerning the exact location and the origin of the noise sources associated to this 1/f noise component, different assumptions and associated models can be found in [10]. For instance the role of the polysilicon to silicon interface is often bring to the fore.…”

Section: B 1/f Noise Characteristicsmentioning

confidence: 92%

Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe:C heterojunction bipolar trasnsistors

Seif

Pascal

Sagnes

et al. 2014

2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Low frequency noise (LFN) in 0.13 µm BiCMOS SiGe:C was characterized both as a function of base current bias IB and emitter area Ae. The LFN exhibits typical behavior of 1/f noise for frequencies up to 1 KHz after which the shot noise 2qI is visible, in transistors with large emitter area (Ae > 1µm 2 ). The 1/f noise is modeled following the SPICE compact model, and the LFN parameters KF and AF were calculated. The extracted figure of merit KB = KF * Ae, has an excellent value of 1.10 −10 µm 2 . The transistors with small emitter area (Ae < 1µm 2 ) can be affected by the presence of generation-recombination (G-R) components. In some cases, where generation-recombination presents large amplitude and high cut-off frequency, it is related to random telegraph signal (RTS).

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“…Then, K B as low as 1.5 10 -10 µm² is found in the devices issued from technology A, and is approximately equal to 6 10 -10 µm² in the less perturbed devices issued from technology B. Moreover, when K F is found to be inversely proportional to A E , it is usually admitted [3] that the 1/f noise sources are located in the intrinsic base-emitter junction. This assumption is right for the less perturbed devices issued from technology B, but for the devices affected by the presence of G-R components the K F proportional to A E -1 law is not verified.…”

Section: /F Noise Spice Modelmentioning

confidence: 96%

“…In order to show the evolution brought by the new technology (technology B) in the low frequency noise domain, we have compared the behavior of the low frequency noise, and the 1/f noise level by calculating the low frequency noise figure of merit K B [3] in the devices issued from each technology.…”

Section: Introductionmentioning

confidence: 99%

Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications

Seif

Pascal

Sagnes

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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In this study, we present recent low frequency noise results obtained on Si/SiGeC Heterojunction Bipolar Transistors (HBTs) associated with a 0.13µm BiCMOS technology. Two technologies are studied, referenced as A and B, with high frequency figures of merit f T /f MAX (unity current gain frequency / maximum oscillation frequency) 220/280 GHz for technology A and 300/400 GHz for technology B. The LF Noise measurements are performed in the 1Hz-100 kHz frequency range as a function of the base bias current and of the emitter area A E . The 1/f noise component is studied through the SPICE LFN parameters A F and K F . The K B figure of merit (K B = K F * A E ), used to compare the 1/f noise level, has an excellent value of 1.5 10 -10 µm² for technology A and above 6 10 -10 µm² for technology B. Dispersion of the 1/f noise level observed on technology B is associated to the presence of predominant GR components.A temperature study of the 1/f noise level evolution in the range 15 -100 °C was also done. The temperature dependence is week except at very low base current bias.

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Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistors

Cited by 29 publications

References 33 publications

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe:C heterojunction bipolar trasnsistors

Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications

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Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistors

Cited by 29 publications

References 33 publications

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Characterization and modeling of low frequency noise in 0.13 &#x00B5;m BiCMOS SiGe:C heterojunction bipolar trasnsistors

Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications

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Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe:C heterojunction bipolar trasnsistors