2017
DOI: 10.24295/cpsstpea.2017.00018
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Review of GaN Totem-Pole Bridgeless PFC

Abstract: Abstract-Switching-mode AC/DC converters are widely used in modern power supplies for computers, data centers and telecommunication equipment. Achieving Power Factor Correction (PFC) and high efficiency are the two most important requirements. In many cases, high power density is also of tremendous interest. Both power efficiency and power density are greatly influenced by the power devices, the topology and the control used. Compared with conventional Si power MOSFET and Si super-junction MOSFET, the newly in… Show more

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Cited by 141 publications
(39 citation statements)
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“…According to the voltage stress for this ACF forward converter, the performances of the 80 V or 100 V state-of-the-art Si MOSFET and GaN FETs are compared in Table 2. In this comparison, three normalized figure of merits (FOMs) [32] is employed. The smaller the FOM, the better performance the device is.…”
Section: Comparing Gan Hemt and Si Mosfetmentioning
confidence: 99%
“…According to the voltage stress for this ACF forward converter, the performances of the 80 V or 100 V state-of-the-art Si MOSFET and GaN FETs are compared in Table 2. In this comparison, three normalized figure of merits (FOMs) [32] is employed. The smaller the FOM, the better performance the device is.…”
Section: Comparing Gan Hemt and Si Mosfetmentioning
confidence: 99%
“…However, their problem is that they apply the restriction of using a certain topology and control strategy for each combined main converter+APD solution. With the advent of wide bandgap (WBG) devices, many topologies have gained more desirability, including the totem-pole rectifier topology [19], [20]. Additionally, as switching frequency limits are getting increased, softswitching control methods are gaining more importance.…”
Section: A Establishing the Decisive Criteriamentioning
confidence: 99%
“…Assim, com a proximidade do limite físico dos interruptores baseados puramente em silício, o crescimento de tecnologias wide bandgap, como o carbeto de silício e o nitreto de gálio, torna-se iminente no ramo da Eletrônica de Potência [4], [5]. No âmbito de topologias PFC, o uso de estratégias para comutação suave com o emprego de interruptor de GaN HEMTs proporcionam medições de rendimento acima de 99% e valores elevados de densidade de potência [9]- [11].…”
Section: Interruptores Gan Hemtunclassified
“…A função de transferência do conversor utilizada no projeto da malha de corrente, G i (s), é apresentada na equação (9). Para a malha de tensão, foi utilizada a função de transferência G v (s), representada na equação (10).…”
Section: A Estratégia De Controleunclassified