A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters

Li, Xiaobin; Ma, Hsi-Pin; Yi, Junhong; Lu, Song; Xu, Jianzhong

doi:10.3390/en13164160

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…During the last few years, research interest to apply gallium nitride (GaN) highelectron-mobility transistors (HEMT) for power electronics converters has been increasing rapidly for different applications in railway [1] and automotive engineering [2]. In terms of power level, they cover the applications from below 48 V DC-DC converter [3] to above 10 kW three-phase DC-AC inverter [4]. GaN-HEMT can operate at higher switching frequency and efficiency than silicon or silicon carbide (SiC) counterparts for below 600 V electrical energy conversion [5].…”

Section: Introductionmentioning

confidence: 99%

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Evans

Johnson

et al. 2021

Energies

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In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic RDSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters.

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Section: Introductionmentioning

confidence: 99%

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Evans

Johnson

et al. 2021

Energies

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show abstract

“…Hence, when operating in the continuous conduction mode, a severe reverse recovery problem encountered by the body diode occurs, consequently reducing efficiency and reliability [7]. Gallium nitride (GaN) transistors, which are representative next-generation power semiconductor devices, are among the features of wide-band gap semiconductors with excellent reverse recovery characteristics and low switching loss; they also have the capacity to operate at high temperatures [8][9][10][11]. Excellent reverse recovery characteristics can resolve the problems of existing Si-based totem-pole PFCs as well as optimize performance and efficiency [12,13].…”

Section: Introductionmentioning

confidence: 99%

Digital Implementation Method for Synchronous PWM Control of GaN Transistor at Zero-Crossing of Totem-Pole PFC in Energy Storage Applications

Kwak

Kim

2020

Electronics

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A digital control scheme for GaN transistor-based totem pole power factor correction (PFC) is proposed in this paper. At the zero crossing, the totem pole PFC has a discontinuous conduction mode (DCM) current section because of its driving method and circuit structure. In the DCM current section, when a typical synchronous switching technique is applied, the inductor current is reduced to less than zero, thereby reducing efficiency. Moreover, because of the nature of the circuit, power may be transferred in reverse. To prevent this, a new synchronous switch technique using the cycle by cycle (CBC) trip function of the digital signal processor (DSP) is proposed. This proposed technique turns off the synchronization switch according to the set DCM level. Consequently, even at a low DCM level, the inductor current is clamped to zero, enabling stable synchronous switching.

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Generalized Behavioral Modelling Methodology of Switch-Diode Cell for Power Loss Prediction in Electromagnetic Transient Simulation

Ghosh

et al. 2021

Energies

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Modern wide-bandgap (WBG) devices, such as silicon carbide (SiC) or gallium nitride (GaN) based devices, have emerged and been increasingly used in power electronics (PE) applications due to their superior switching feature. The power losses of these devices become the key of system efficiency improvement, especially for high-frequency applications. In this paper, a generalized behavioral model of a switch-diode cell (SDC) is proposed for power loss estimation in the electromagnetic transient simulation. The proposed model is developed based on the circuit level switching process analysis, which considers the effects of parasitics, the operating temperature, and the interaction of diode and switch. In addition, the transient waveforms of the SDC are simulated by the proposed model using dependent voltage and current sources with passive components. Besides, the approaches of obtaining model parameters from the datasheets are given and the modelling method is applicable to various semiconductors such Si insulated-gate bipolar transistor (IGBT), Si/SiC metal–oxide–semiconductor field-effect transistor (MOSFET ), and GaN devices. Further, a multi-dimensional power loss table in a wide range of operating conditions can be obtained with fast speed and reasonable accuracy. The proposed approach is implemented in PSCAD/ Electromagnetic Transients including DC, EMTDC ,(v4.6, Winnipeg, MB, Canada) and further verified by the hardware setups including different daughter boards for different devices.

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A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters

Cited by 4 publications

References 29 publications

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Digital Implementation Method for Synchronous PWM Control of GaN Transistor at Zero-Crossing of Totem-Pole PFC in Energy Storage Applications

Generalized Behavioral Modelling Methodology of Switch-Diode Cell for Power Loss Prediction in Electromagnetic Transient Simulation

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