Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Park, Min Hyuk; Lee, Dong Hoon; Yang, Kyounghoon; Park, Juyong; Yu, Geun Taek; Park, Hyeon Woo; Materano, Monica; Mittmann, Terence; Lomenzo, Patrick D.; Mikolajick, Thomas; Schroeder, Uwe; Hwang, Cheol Seong

doi:10.1039/d0tc01695k

Cited by 104 publications

(89 citation statements)

References 153 publications

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“…[2][3][4][5] In novel HZO-based FE devices, the HZO films are interfaced with metals and semiconductors, and their interfaces are known to be the source of device variability and reliability challenges. 6 However, the relationships between the atomic-scale interface properties and the electric characteristics leading to defect formation and degradation are not well established.…”

Section: Introductionmentioning

confidence: 99%

Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

2021

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Section: Introductionmentioning

confidence: 99%

Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

2021

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“…[41] Density functional theory (DFT) calculations also verified this correlation that tetragonal and orthorhombic phase formation is suppressed for higher oxygen concentrations in HfO 2 , and monoclinic phase nuclei are formed. [41,99] In addition, the phonon vibrations upon the application of voltage bias would decrease with the increase in oxygen vacancy concentration. In this sense, the ferroelectric behavior such as fatigue and imprint field would degrade under high oxygen vacancies.…”

Section: Oxygen Dependencymentioning

confidence: 99%

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Cao

Shi

Zhu

et al. 2021

Physica Rapid Research Ltrs

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Hafnia thin films have been under intensive research during the past few years due to its robust ferroelectricity under very thin limit and good compatibility with silicon. The polar crystal structure critical to ferroelectricity in hafnia thin films is metastable, and is generally obtained in polycrystalline thin films, coexisting with other nonpolar phases. Recently, much attention has been focused on epitaxial ferroelectric hafnia thin films to get rid of the nonpolar phases, to investigate the more intrinsic factors to ferroelectricity, and its potential applications. Herein, recent progress on the growth of epitaxial hafnia thin films is reviewed. The epitaxial growth mechanism is explored, in particular, the interface matching, phase stability under temperature and oxygen pressure, followed by discussions on thickness dependency of ferroelectricity, and wake-up effect in hafnia. Finally, an outlook on ferroelectric hafnia both on fundamental studies and future applications is discussed.

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“…On the other hand, the fluorite‐structure ferroelectrics exhibit suitable ferroelectric properties even at the sub‐10 nm scale and can be deposited on complicated 3D structures using mature deposition techniques such as atomic layer deposition (ALD). [ 2–6 ]…”

Section: Introductionmentioning

confidence: 99%

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Kim

Jung

et al. 2021

Physica Rapid Research Ltrs

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Since the first report on the unexpected ferroelectricity of fluorite-structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based on theoretical calculations and experimental demonstrations, it is now well known that fluorite-structure ferroelectrics are compatible with complementary metal-oxide-semiconductor technology and exhibit ferroelectric properties at extremely thin (<10 nm) thicknesses. It should be noted that the noncentrosymmetric orthorhombic phase, which is responsible for ferroelectric behavior, is formed even at low temperatures (400 C or less). Herein, the various factors such as doping effects, deposition method, annealing method and conditions, and substrate material are reviewed, focusing on thermal budget, especially the low-temperature annealing process for formation of the ferroelectric phase. These low-thermal-budget processes facilitate not only the integration of ferroelectric circuits in the back-end-of-line to increase the effective memory area and add more functionalities but also applications for flexible and wearable electronics.

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Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Abstract: The defect chemistry and its effect on nanoscale polymorphism and physical/electrical properties in fluorite-structure ferroelectrics are reviewed.

Cited by 104 publications

References 153 publications

Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

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