Review of commercial spacecraft anomalies and single-event-effect occurrences

Barillot, C.; Calvel, P.

doi:10.1109/23.490914

Cited by 12 publications

(4 citation statements)

References 10 publications

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“…These high-energy radiation particles will cause the macroscopic electrical properties of devices to change, degrade, or even fail. The singleevent effect (SEE) and effect of total ionizing dose (TID) are the main causes of the failure of spacecrafts and satellites [3][4][5][6][7][8][9][10][11]. The radiation hardening technology of integrated circuits mainly include radiation-hardened by design (RHBD) storage cells (heavy ion tolerant cell, dual interlocked storage cell, etc.)…”

Section: Introductionmentioning

confidence: 99%

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

Zhao

Liu

et al. 2022

Electronics

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The total ionizing dose (TID) effects on single-event upset (SEU) hardness are investigated for two silicon-on-insulator (SOI) static random access memories (SRAMs) with different layout structures in this paper. The contrary changing trends of TID on SEU sensitivity for 6T and 7T SOI SRAMs are observed in our experiment. After 800 krad(Si) irradiation, the SEU cross-sections of 6T SRAMs increases by 15%, while 7T SRAMs decreases by 60%. Experimental results show that the SEU cross-sections are not only affected by TID irradiation, but also strongly correlate with the layout structure of the memory cells. Theoretical analysis shows that the decrease of SEU cross-section of 7T SRAM is caused by a raised OFF-state equivalent resistance of the delay transistor N5 after TID exposure, which is because the radiation-induced charges are trapped in the shallow trench, and isolation oxide (STI) and buried oxide (BOX) enhance the carrier scattering rate of delay transistor N5.

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Section: Introductionmentioning

confidence: 99%

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

Zhao

Liu

et al. 2022

Electronics

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“…[3] Radiation effects, such as total ionizing dose (TID) and single event effect (SEE), have been identified as the major causes of component malfunction for spacecraft in a space radiation environment. [4][5][6] Thus, for space-grade electronic systems, it is crucial to characterize and understand the effects of radiation on Flash memories. TID causes a shift in the threshold voltage of Flash memory cells and may subsequently change the program state to the erase state.…”

Section: Introductionmentioning

confidence: 99%

Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory

et al. 2018

Chinese Phys. B

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Upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory induced by accelerated 129 Xe and 209 Bi ions are investigated in detail. The linear energy transfer covers the range from 50 to 99.8 MeV/(mg/cm 2 ). When the memory chips are powered off during heavy ions irradiation, single-event-latch-up and single-event-function-interruption are excluded, and only 0->1 upset errors in the memory array are observed. These error bit rates seem very difficult to achieve and cannot be simply recovered based on the power cycle. The number of error bits shows a strong dependence on the linear energy transfer (LET). Under room-temperature annealing conditions, the upset errors can be reduced by about two orders of magnitude using rewrite/reprogram operations, but they subsequently increase once again in a few minutes after the power cycle. High-temperature annealing can diminish almost all error bits, which are affected by the lower LET 129 Xe ions. The percolation path between the floating-gate (FG) and the substrate contributes to the radiation-induced leakage current, and has been identified as the root cause of the upset errors of the Flash memory array in this work.

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“…For the past two decades, research focused on the effects of ionizing radiation on semiconductor devices has shown that these manifest themselves in threshold voltage shifts, timing parameter changes and increases in supply currents, among others[3, 4, 5, 6]. Current research is concentrating particularly on dose rate issues[2], interface traps[7], total dose issues[1, 8], single event upsets (SEU)[9, 10] and test methods and procedures[1, 2].…”

Section: Introductionmentioning

confidence: 99%

The effects of ionizing radiation on the functional and parametric performance of NMOS static RAMs

Meniconi

Barry

Betts

1997

Int J Qual & Reliability Mgmt

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The degradation of both the functional and electrical parameter performance of integrated circuits has been under investigation for a number of years. Aims to demonstrate that statistical methods may be used to determine physical changes in these devices, rather than the time‐consuming and costly procedures of physical failure analysis. In addition, draws a comparison between the functional tests and the parametric tests. The data were obtained by stressing statistical samples of TMS2114L NMOS static RAMs to varying total doses of ionizing radiation. Presents and discusses the results obtained from these tests and suggests statistical and mathematical models to estimate performance degradation.

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Review of commercial spacecraft anomalies and single-event-effect occurrences

Cited by 12 publications

References 10 publications

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory

The effects of ionizing radiation on the functional and parametric performance of NMOS static RAMs

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