Review of carbon nanotube nanoelectronics and macroelectronics

Che, Yuchi; Chen, Haitian; Gui, Hui; Liu, Jia; Liu, Bilu; Zhou, Chongwu

doi:10.1088/0268-1242/29/7/073001

Cited by 117 publications

(78 citation statements)

References 112 publications

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“…[29][30][31][32][33] Besides their use as transparent electrodes, carbon-based thin films, especially the CNT thin film, are good candidates for the semiconducting channel of TFTs, and many impressive research achievements have been reported to demonstrate wide range of possible uses for carbon-based flexible electronics. [34][35][36][37][38][39][40][41][42][43][44][45][46][47][48] It is recognized that carbon is a unique element that can be used in both the electrode and the channel for the fabrication of all-carbon TFTs and ICs for extremely flexible and transparent electronics.…”

Section: Introductionmentioning

confidence: 99%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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silicon wafer, TFTs can be fabricated on various types of rigid or flexible substrates. [1] TFTs fabricated on glass are primarily used for driving circuits in the liquid-crystal displays of televisions, computer monitors, and mobile phones, etc. Well-established TFT technologies based on amorphous silicon and polycrystalline silicon are well-suited for large-area, highresolution panels, e.g., six pieces of 65-and 75-inch TFT arrays can be fabricated on a 10.5th generation glass substrate. [2] However, TFTs based on these silicon-based semiconductors still face challenges in flexible and transparent applications, which would allow circuit integration on curved and non-rigid surfaces and in multi-layer packaging, e.g., head-up displays on windshields, informational displays on eyeglasses and transparent electronic skin in wearable electronics. [3] In terms of the materials used to construct flexible and transparent devices, not only the transistor channel but also the dielectric layers and metallic interconnects should have excellent flexibility and transparency. [4] The following factors play critical roles in the selection of channel materials: carrier mobility, temperature of material preparation, flexibility, large area availability, cost and stability. Carrier mobility is an important parameter to characterize the drift velocity of electrons or holes in a semiconductor under an applied electric field. [5] A high mobility corresponds to a high operating speed of the TFTs and their circuits. The only advantage of low-temperature polycrystalline silicon is its relatively high mobility. [6] Amorphous oxide semiconductors, including indium gallium zinc oxide, have a modest mobility and are costly due to the use of noble metal elements. [7] Hydrogenterminated amorphous silicon has modest properties in carrier mobility, large-area and flexibility, [1] and organic semiconductors are better suited for flexible and transparent TFTs except for their shortcomings of low mobility and poor environmental stability. [8] On the other hand, normal metal electrodes, such as gold, silver, aluminum and copper, cannot be used to form transparent electrodes due to their poor light transmittance. Both transparent indium tin oxide (ITO) electrodes and opaque metal electrodes suffer from flexibility constraints and can usually tolerate strains of less than 2%. [9][10][11] Therefore, the discovery of new types of robust channel and electrode materials is essential to achieve transparent, flexible, and even stretchable electronics. [12] Carbon nanomaterials, such as carbon nanotubes (CNTs) and graphene, have attracted great attention for potential use in flexible and transparent electronics since their discovery in the last two decades, [13,14] owing to their excellent properties Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and f...

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Section: Introductionmentioning

confidence: 99%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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“…I n the past 20 years, marked advances in single-walled carbon nanotube (SWNT)-based integrated circuits (ICs) have been witnessed 1,2 . However, the density and quality of SWNT arrays still limit the performance of devices.…”

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confidence: 99%

Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

et al. 2015

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Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future. These applications require high-density horizontally aligned SWNT arrays. During the past decade, significant efforts have been directed towards growth of high-density SWNT arrays. However, obtaining SWNT arrays with suitable density and quality still remains a big challenge. Herein, we develop a rational approach to grow SWNT arrays with ultra-high density using Trojan catalysts. The density can be as high as 130 SWNTs mm À 1 . Field-effect transistors fabricated with our SWNT arrays exhibit a record drive current density of À 467.09 mA mm À 1 and an on-conductance of 233.55 mS mm À 1 . Radio frequency transistors fabricated on these samples exhibit high intrinsic f T and f MAX of 6.94 and 14.01 GHz, respectively. These results confirm our high-density SWNT arrays are strong candidates for applications in electronics.

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“…Among these and especially SWNTs, both semiconducting and metallic types have been well demonstrated (depending on chirality) to have tremendous electronic and optical properties, for example, ballistic conduction [1][2][3]. Much progress has also been made on developing applications of SWNTs based on these properties [4].…”

mentioning

confidence: 99%