2018
DOI: 10.1116/1.5011790
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Review Article: Stress in thin films and coatings: Current status, challenges, and prospects

Abstract: The issue of stress in thin films and functional coatings is a persistent problem in materials science and technology that has congregated many efforts, both from experimental and fundamental points of view, to get a better understanding on how to deal with, how to tailor, and how to manage stress in many areas of applications. With the miniaturization of device components, the quest for increasingly complex film architectures and multiphase systems and the continuous demands for enhanced performance, there is… Show more

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Cited by 524 publications
(314 citation statements)
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“…For multilayers, the deposition process always started with the MeN sublayer being deposited first. The evolution of intrinsic stress developed during growth was monitored in situ and in real-time using the wafer curvature technique [33]. A multiple-beam optical stress sensor (MOSS) designed by kSpace Associates (kSA, Dexter, MI, USA) was implemented in the deposition chamber.…”
Section: Methodsmentioning
confidence: 99%
“…For multilayers, the deposition process always started with the MeN sublayer being deposited first. The evolution of intrinsic stress developed during growth was monitored in situ and in real-time using the wafer curvature technique [33]. A multiple-beam optical stress sensor (MOSS) designed by kSpace Associates (kSA, Dexter, MI, USA) was implemented in the deposition chamber.…”
Section: Methodsmentioning
confidence: 99%
“…This is because the value of α for Al (~ 21 to 25 10 -6 K -1 ) is significantly higher than α for Si, Ge and SiGe (~ 2.9 to 6.910 -6 K -1 ) for temperatures ranging from RT to 350 °C [47,48]. The evolutionary trend of thermal stress during annealing and subsequent cooling in thin films can be predictably understood if α of the materials are known for the range of temperatures [49,50]. So when the Al-SiGe system is heated at high rate ~ 21 °C/min, there will be large and rapid expansion of the Al lattice.…”
Section: Fig8 Avrami Plot -Ln [-Ln (1-fcryst)] Vs Ln (Ta)mentioning
confidence: 99%
“…There are various possible ways to generate strain on a thin film deposited on rigid substrate e.g. by lattice mismatch [16,17], voltage application via transducers [18] etc., whereas for a film deposited on flexible substrate bending, stretching, peeling or twisting mechanism also can generate adequate stress [19]. Such mechanical methods transfer almost uniform stress from substrate to the film, which gives rise to device flexibility.…”
Section: Introductionmentioning
confidence: 99%